Andrew Armstrong
Physics and Astronomy · The Ohio State University
Publications
303
Citations
5,833
Est. group size
~6
Recurring co-author estimate
Active years
60
Publishing since 1967
This researcher works on wide-bandgap semiconductor materials and devices, particularly transistors and detectors made from aluminum gallium nitride (AlGaN) and related compounds. Much of the recent work focuses on high electron mobility transistors (HEMTs) that can operate reliably at extreme temperatures, as well as characterizing defects in these materials for applications like radiation-tolerant electronics and light detectors. This research area is largely unrelated to a couple of unrelated titles in the list (e.g., on heatwave coping or geriatric care), which appear to be from a different individual sharing the same name.
Publication output has fluctuated over the past decade, peaking around 2019-2021, dipping in 2022, and partially recovering to a steady rate of roughly 12-20 papers per year in 2023-2025.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Boiling point: short-term coping with heatwaves in the UK is not enough
Environmental Research Letters · 2025
- UWBG ferroelectric ScAlN/AlGaN high-electron mobility transistor
Applied Physics Letters · 2025
- The impact of pulse width modulation on heat accumulation in AlGaN channel HEMTs
APL Electronic Devices · 2025
- 2645 Delivering safe admission avoidance via comprehensive geriatric assessment under an emergency department frailty service
Age and Ageing · 2025
- Deep Level Defect Spectroscopy and Electron Beam-Induced Current Characterization of GaN Junctions
The Materials Research Society series · 2025
- Optical characterization of deep-level defects in n-type Al <i> <sub>x</sub> </i> In <i> <sub>y</sub> </i> Ga <sub> 1− <i>x</i> − <i>y</i> </sub> P for the development of solid-state photomultiplier analogs
Semiconductor Science and Technology · 2025
- Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10 <sup>4</sup>
IEEE Electron Device Letters · 2025
- Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration
APL Electronic Devices · 2025
- Origin of proton irradiation-induced deep acceptors in Al0.70Ga0.30N
Journal of Applied Physics · 2025
- The Impact of Substrate Selection on Thermal Performance of AlGaN Channel HEMTs
2025
- High Al content AlGaN channel HEMTs with diamond integration for thermal management
2025
- Extreme Temperature Operation of AlGaN High Electron Mobility Transistors
2024
- Exploring AlGaInP for use in Si photomultiplier analogs
2024
- Extreme Temperature Operation of AlGaN High Electron Mobility Transistors
2024
- Potassium Perchlorate Solubility in Multi-Solvent Systems
2024
- Applied Physics Letters×20
- ECS Meeting Abstracts×16
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)×16
- IEEE Electron Device Letters×9
- Journal of Applied Physics×8
- Robert Kaplar
Physics and Astronomy · The Ohio State University
- Brelon J. May
Physics and Astronomy · The Ohio State University
- Vishank Talesara
Physics and Astronomy · The Ohio State University
- Siddharth Rajan
Physics and Astronomy · The Ohio State University
- Junao Cheng
Physics and Astronomy · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile