LabCompass

Siddharth Rajan

Physics and Astronomy · The Ohio State University

Mid career · publishing since 2004

Publications

379

Citations

14,838

Est. group size

~27

Recurring co-author estimate

Active years

22

Publishing since 2004

Research summary
AI-generated

Siddharth Rajan's research focuses on wide- and ultrawide-bandgap semiconductor materials such as GaN, Ga2O3, and related compounds, which are used to build power electronics, high-frequency transistors, and optoelectronic devices. His work spans material growth, device fabrication, and characterization, including heterojunctions, transistors (HEMTs, FinFETs), diodes, and field-emission structures aimed at improving efficiency and performance in electronics that operate at high power, high frequency, or high temperature.

Wide- and ultrawide-bandgap semiconductors (GaN, Ga2O3)High-power and high-frequency transistor devices (HEMTs, MISHEMTs)Semiconductor heterojunctions and band alignmentHigh-permittivity dielectric integration for power electronicsVacuum field emission and nanostructured semiconductor devices

Publication output peaked around 2018-2020 and has since settled into a steady, somewhat lower rate of about 18-23 papers per year through 2025.

Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026

Publication cadence
Publications per year over the last 10 years — averaging 16.4/year recently
2017: 16 publications172018: 27 publications182019: 36 publications36192020: 30 publications202021: 21 publications212022: 18 publications222023: 23 publications232024: 22 publications242025: 19 publications2526
Recent publications
Publishes in
  • Applied Physics Letters×43
  • arXiv (Cornell University)×30
  • IEEE Electron Device Letters×12
  • IEEE Transactions on Electron Devices×12
  • Journal of Applied Physics×11
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This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 19, 2026.

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