Siddharth Rajan
Physics and Astronomy · The Ohio State University
Publications
379
Citations
14,838
Est. group size
~27
Recurring co-author estimate
Active years
22
Publishing since 2004
Siddharth Rajan's research focuses on wide- and ultrawide-bandgap semiconductor materials such as GaN, Ga2O3, and related compounds, which are used to build power electronics, high-frequency transistors, and optoelectronic devices. His work spans material growth, device fabrication, and characterization, including heterojunctions, transistors (HEMTs, FinFETs), diodes, and field-emission structures aimed at improving efficiency and performance in electronics that operate at high power, high frequency, or high temperature.
Publication output peaked around 2018-2020 and has since settled into a steady, somewhat lower rate of about 18-23 papers per year through 2025.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Progresses and Frontiers in Ultrawide Bandgap Semiconductors
Advanced Electronic Materials · 2025
- PIDNet-SLAM: A Multi-Resolution Semantic SLAM Algorithm for Dynamic Scenes
2025
- Radio frequency analysis of scaled BaTiO3/Al2O3/In0.04Al0.70GaN0.26/GaN MISHEMTs
APL Electronic Devices · 2025
- Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 p-n heterojunction
Applied Surface Science · 2024
- Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy
Applied Surface Science · 2024
- Smooth and Vertical Sidewall Formation for AlGaN-Based Electronic and Optoelectronic Devices
ECS Journal of Solid State Science and Technology · 2024
- Progresses and Frontiers in Ultrawide Bandgap Semiconductors
Advanced Materials Interfaces · 2024
- Temperature dependence of the low-frequency noise in AlGaN/GaN fin field effect transistors
Journal of Applied Physics · 2024
- Demonstration of gallium oxide nano-pillar field emitter arrays
AIP Advances · 2023
- Electricity Generation of Dynamic Bifacial Solar Panels Using IoT
2023
- Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
arXiv (Cornell University) · 2023
- Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
arXiv (Cornell University) · 2023
- Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction
arXiv (Cornell University) · 2023
- β-Gallium oxide power electronics
APL Materials · 2022
- III-N polarization-graded transistors for millimeter-wave applications—Understanding and future potential
Applied Physics Letters · 2022
- Applied Physics Letters×43
- arXiv (Cornell University)×30
- IEEE Electron Device Letters×12
- IEEE Transactions on Electron Devices×12
- Journal of Applied Physics×11
- Brelon J. May
Physics and Astronomy · The Ohio State University
- J. Y. Lin
Physics and Astronomy · Purdue University West Lafayette
- Aaron R. Arehart
Physics and Astronomy · The Ohio State University
- Shahadat H. Sohel
Physics and Astronomy · The Ohio State University
- Ke Xu
Physics and Astronomy · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
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