Shahadat H. Sohel
Physics and Astronomy · The Ohio State University
Publications
28
Citations
632
Est. group size
—
Recurring co-author estimate
Active years
10
Publishing since 2017
Shahadat H. Sohel's research focuses on designing and fabricating advanced semiconductor electronic devices, especially transistors and diodes built from wide-bandgap and ultra-wide-bandgap materials like gallium nitride (GaN), aluminum gallium nitride (AlGaN), and gallium oxide (Ga2O3). This work targets applications requiring high power, high frequency (radio-frequency, RF), and high-temperature operation, such as next-generation power electronics and communication systems. Prospective students would likely engage in device fabrication, materials characterization, and electrical testing of transistors and diodes.
Publication output peaked in 2019 with 10 papers and has since slowed to roughly 1-2 per year, indicating a declining or lower and steadier recent output.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts
APL Electronic Devices · 2025
- Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density
arXiv (Cornell University) · 2024
- Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications
physica status solidi (a) · 2023
- Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts
arXiv (Cornell University) · 2023
- Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance
arXiv (Cornell University) · 2022
- Al<sub>0.7</sub>Ga<sub>0.3</sub>N MESFET With All-Refractory Metal Process for High Temperature Operation
IEEE Transactions on Electron Devices · 2021
- BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
Applied Physics Letters · 2020
- Small signal analysis of ultra-wide bandgap Al0.7Ga0.3N channel MESFETs
Microelectronic Engineering · 2020
- Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors
Applied Physics Express · 2020
- $\beta$ -Ga<sub>2</sub>O<sub>3</sub> Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
IEEE Electron Device Letters · 2019
- Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN<sub>x</sub> Passivation
IEEE Electron Device Letters · 2019
- Al<sub>0.75</sub>Ga<sub>0.25</sub>N/Al<sub>0.6</sub>Ga<sub>0.4</sub>N heterojunction field effect transistor with f<sub>T</sub> of 40 GHz
Applied Physics Express · 2019
- Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications
IEEE Electron Device Letters · 2019
- Epitaxial passivation of delta doped $\beta$ -Ga<sub>2</sub>O<sub>3</sub> field effect transistors
2019
- Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field
arXiv (Cornell University) · 2019
- IEEE Electron Device Letters×7
- arXiv (Cornell University)×5
- Applied Physics Express×2
- IEEE Transactions on Electron Devices×2
- Solid-State Electronics×1
- Aaron R. Arehart
Physics and Astronomy · The Ohio State University
- Siddharth Rajan
Physics and Astronomy · The Ohio State University
- Brelon J. May
Physics and Astronomy · The Ohio State University
- Ke Xu
Physics and Astronomy · Purdue University West Lafayette
- J. Y. Lin
Physics and Astronomy · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile