Brelon J. May

Brelon J. May works on growing thin crystalline films of semiconductor and nitride materials using a technique called molecular beam epitaxy, which deposits atoms layer-by-layer under vacuum to build precise crystal structures. Recent work explores nitride compounds doped with elements like uranium, samarium, and manganese-chromium, as well as methods for reusing expensive semiconductor substrates by growing water-soluble salt layers underneath them. This research is relevant to developing new electronic, magnetic, and superconducting materials for potential device applications.

Publication output has been variable but steady over the last decade, with a dip around 2020-2021 followed by a consistent pace of 2-4 papers per year through 2026.

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