LabCompass

J. Y. Lin

Physics and Astronomy · Purdue University West Lafayette

OpenAlex ORCID
Established · publishing since 1985
GaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor Quantum Structures and DevicesSemiconductor materials and devicesZnO doping and properties

Publications

550

Citations

21,690

Est. group size

~2

Recurring co-author estimate

Active years

42

Publishing since 1985

Research summary
AI-generated

J. Y. Lin studies ultrawide bandgap semiconductor materials, focusing on growing and characterizing crystals like aluminum nitride (AlN) and hexagonal boron nitride (h-BN), as well as gallium-nitride-related compounds. A major application of this work is developing detectors for fast neutrons and studying the electrical and optical properties of these materials for use in advanced electronic and radiation-sensing devices.

Ultrawide bandgap semiconductors (AlN, h-BN)Crystal growth and epitaxy techniquesDoping and defect engineering in semiconductorsNeutron detection devicesOptical and electronic material properties

Publication output has fluctuated over the last decade but shows a recent resurgence, with a notable rise in 2025 after a relatively quieter period in 2021-2023.

Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026

Publication cadence
Publications per year over the last 10 years — averaging 8.2/year recently
2017: 16 publications172018: 8 publications182019: 8 publications192020: 18 publications18202021: 6 publications212022: 10 publications222023: 6 publications232024: 8 publications242025: 16 publications252026: 1 publication26
Recent publications
Publishes in
  • Applied Physics Letters×40
  • Bulletin of the American Physical Society×9
  • Journal of Applied Physics×7
  • Applied Physics Express×6
  • AIP Advances×4
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This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 20, 2026.

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