Sheikh Ifatur Rahman
Physics and Astronomy · The Ohio State University
Publications
43
Citations
643
Est. group size
~7
Recurring co-author estimate
Active years
10
Publishing since 2016
This researcher works on III-Nitride (GaN/AlGaN/InGaN) and gallium oxide (Ga2O3) semiconductor devices, including LEDs, transistors, tunnel junctions, and Schottky diodes. The work spans device design, simulation, and experimental fabrication aimed at improving efficiency and integration for applications like displays, lighting, ultraviolet lasers, and power electronics. Research is grounded in materials science and electrical engineering, targeting both fundamental device physics and practical performance improvements such as thermal stability and quantum efficiency.
Publication output has grown substantially over the last decade, rising from sporadic early output to a peak of 12 papers in 2023, with continued strong activity (5-7 papers/year) through 2024-2025.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs
Applied Physics Letters · 2025
- Integration of light emitting diodes and transistors for next-generation display and lighting
2025
- Heterogeneous integration of 20x10 µm blue micro-LEDs/pixels on GaN HEMTs for visible light communication
2025
- High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C
Applied Physics Letters · 2024
- Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor
Applied Physics Letters · 2024
- Design and simulation of a III-Nitride light emitting transistor
Semiconductor Science and Technology · 2024
- Tunnel Junction-Enabled AlGaN/GaN Heterojunction Bipolar Transistors With All n-Type Contacts
IEEE Transactions on Electron Devices · 2024
- Investigation of Interlayer Dielectric in BaTiO<sub>3</sub>/III‐Nitride Transistors
physica status solidi (RRL) - Rapid Research Letters · 2024
- Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
arXiv (Cornell University) · 2024
- Design and Simulation of a III-Nitride Light Emitting Transistor
arXiv (Cornell University) · 2024
- <b> <i>β</i> </b>-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching
Applied Physics Letters · 2023
- Towards Electrically-Pumped AlGaN UV-A Lasers with Transparent Tunnel Junctions
2023
- Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions
Applied Physics Letters · 2023
- Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells
Journal of Physics D Applied Physics · 2023
- Multi-active region AlGaN UV LEDs with transparent tunnel junctions
Applied Physics Express · 2023
- Applied Physics Letters×7
- arXiv (Cornell University)×6
- Advanced Functional Materials×2
- ACS Applied Energy Materials×2
- Solar RRL×2
- J. Y. Lin
Physics and Astronomy · Purdue University West Lafayette
- Agnes Maneesha Dominic Merwin Xavier
Physics and Astronomy · The Ohio State University
- Brelon J. May
Physics and Astronomy · The Ohio State University
- Siddharth Rajan
Physics and Astronomy · The Ohio State University
- Syed M. N. Hasan
Physics and Astronomy · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
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