LabCompass

Sheikh Ifatur Rahman

Physics and Astronomy · The Ohio State University

Mid career · publishing since 2016Rising activity

Publications

43

Citations

643

Est. group size

~7

Recurring co-author estimate

Active years

10

Publishing since 2016

Research summary
AI-generated

This researcher works on III-Nitride (GaN/AlGaN/InGaN) and gallium oxide (Ga2O3) semiconductor devices, including LEDs, transistors, tunnel junctions, and Schottky diodes. The work spans device design, simulation, and experimental fabrication aimed at improving efficiency and integration for applications like displays, lighting, ultraviolet lasers, and power electronics. Research is grounded in materials science and electrical engineering, targeting both fundamental device physics and practical performance improvements such as thermal stability and quantum efficiency.

III-Nitride semiconductor devices (GaN/AlGaN/InGaN)LEDs, micro-LEDs, and light-emitting transistorsTunnel junctions and heterojunction devicesGallium oxide (Ga2O3) power devicesDevice design, simulation, and fabrication

Publication output has grown substantially over the last decade, rising from sporadic early output to a peak of 12 papers in 2023, with continued strong activity (5-7 papers/year) through 2024-2025.

Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026

Publication cadence
Publications per year over the last 10 years — averaging 5.6/year recently
2017: 2 publications1718192020: 7 publications202021: 4 publications212022: 4 publications222023: 12 publications12232024: 7 publications242025: 5 publications2526
Recent publications
Publishes in
  • Applied Physics Letters×7
  • arXiv (Cornell University)×6
  • Advanced Functional Materials×2
  • ACS Applied Energy Materials×2
  • Solar RRL×2
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This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 19, 2026.

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