Vishank Talesara
Physics and Astronomy · The Ohio State University
Publications
17
Citations
279
Est. group size
~5
Recurring co-author estimate
Active years
9
Publishing since 2017
This researcher works on wide-bandgap and ultrawide-bandgap semiconductor materials and devices, especially gallium nitride (GaN) and silicon carbide (SiC) power electronics, along with graphene-based materials for thermal management. Their work spans material characterization (e.g., imaging defects in GaN crystals), device design and fabrication (power diodes, transistors, MOSFETs), and reliability testing of these devices for use in power conversion systems.
Publication output has been modest and fluctuating over the past decade, with occasional gaps (e.g., 2018, 2024) and a recent average of about 1.6 papers per year over the last five years.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Dynamic Reverse Bias Reliability Testing of SiC MOSFETs
2025
- Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation
Scientific Reports · 2025
- Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2
Applied Physics Letters · 2023
- GaN Power p–n Diodes on Hydride Vapor Epitaxy GaN Substrates with Near‐Unity Ideality Factor and <0.5 mΩ cm<sup>2</sup>Specific On‐Resistance
physica status solidi (RRL) - Rapid Research Letters · 2022
- Characterization of Near Conduction Band SiC/SiO<sub>2</sub> Interface Traps in Commercial 4H-SiC Power MOSFETs
2022
- Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate
Journal of materials research/Pratt's guide to venture capital sources · 2021
- High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V
physica status solidi (RRL) - Rapid Research Letters · 2021
- Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.4</sub>Ga<sub>0.6</sub>N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm
IEEE Electron Device Letters · 2020
- Dynamic Switching of SiC Power MOSFETs Based on Analytical Subcircuit Model
IEEE Transactions on Power Electronics · 2020
- Silicon Oxycarbide Accelerated Chemical Vapor Deposition of Graphitic Networks on Ceramic Substrates for Thermal Management Enhancement
ACS Applied Nano Materials · 2019
- Thermal Management of High-Power Switching Transistors Using Thick CVD-Grown Graphene Nanomaterial
IEEE Transactions on Power Electronics · 2019
- Dual Silicon Oxycarbide Accelerated Growth of Well‐Ordered Graphitic Networks for Electronic and Thermal Applications
Advanced Materials Technologies · 2019
- SiOC‐Accelerated Graphene Grown on SiO<sub>2</sub>/Si with Tunable Electronic Properties
physica status solidi (RRL) - Rapid Research Letters · 2019
- High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm
IEEE Electron Device Letters · 2017
- physica status solidi (RRL) - Rapid Research Letters×3
- IEEE Electron Device Letters×2
- Applied Physics Letters×2
- IEEE Transactions on Power Electronics×2
- ACS Applied Nano Materials×1
- Andrew Armstrong
Physics and Astronomy · The Ohio State University
- Robert Kaplar
Physics and Astronomy · The Ohio State University
- Brelon J. May
Physics and Astronomy · The Ohio State University
- Aaron R. Arehart
Physics and Astronomy · The Ohio State University
- Mohammad Wahidur Rahman
Physics and Astronomy · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile