LabCompass

Robert Kaplar

Physics and Astronomy · The Ohio State University

OpenAlex ORCID
Established · publishing since 1998
GaN-based semiconductor devices and materialsSemiconductor materials and devicesSilicon Carbide Semiconductor TechnologiesGa2O3 and related materialsAdvancements in Semiconductor Devices and Circuit Design

Publications

346

Citations

4,787

Est. group size

—

Recurring co-author estimate

Active years

28

Publishing since 1998

Research summary
AI-generated

Robert Kaplar studies wide-bandgap and ultra-wide-bandgap semiconductor materials and devices, particularly those based on gallium nitride (GaN), silicon carbide (SiC), and gallium oxide (Ga2O3), which are used to build power electronics that can handle high voltages, high temperatures, and radiation exposure. His work spans device fabrication, materials characterization, reliability testing (including radiation and thermal effects), and applications in power conversion, pulsed power, and fusion energy systems. This research is relevant to students interested in semiconductor device physics, power electronics engineering, and materials science for energy applications.

Wide-bandgap and ultra-wide-bandgap semiconductors (GaN, SiC, Ga2O3)Power electronic device design and reliabilityRadiation effects and single-event burnout in semiconductor devicesMaterials characterization (interfaces, contacts, thermal management)Pulsed power and high-voltage device applications

Publication output grew steadily from 2017 through a peak around 2022, then has declined somewhat in the most recent years (2023-2025), though remaining substantial.

Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026

Publication cadence
Publications per year over the last 10 years — averaging 22.4/year recently
2017: 20 publications172018: 15 publications182019: 23 publications192020: 24 publications202021: 31 publications212022: 37 publications37222023: 34 publications232024: 23 publications242025: 18 publications2526
Recent publications
Publishes in
  • OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)×33
  • ECS Meeting Abstracts×28
  • Applied Physics Letters×7
  • IEEE Transactions on Electron Devices×6
  • IEEE Electron Device Letters×5
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This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 19, 2026.

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