Junao Cheng

Junao Cheng works on semiconductor devices and materials, particularly power electronics based on GaN (gallium nitride) and related wide-bandgap materials, with a focus on improving voltage handling and reducing electrical losses in transistors and diodes. This research also touches on perovskite oxide materials (like BaTiO3 and BaSnO3) for use in field-effect transistors, and includes some work on 2D materials (MoS2) and nano-electroporation, a technique for delivering substances into cells using electric fields. This work is generally aimed at improving the performance and reliability of electronic devices used in power management and biomedical applications.

Publication output has been modest and somewhat variable over the last decade, with a peak of 4 papers in 2023 followed by a gap in 2024, suggesting an irregular rather than strongly growing or steadily declining pace.

Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026