Mengwei Si
Engineering · Purdue University West Lafayette
Publications
238
Citations
7,651
Est. group size
~17
Recurring co-author estimate
Active years
15
Publishing since 2012
Mengwei Si works on next-generation electronic devices, focusing on ferroelectric materials (like hafnium-zirconium oxide) and oxide semiconductor transistors (such as indium oxide and IGZO) for applications in memory, neuromorphic computing, and high-mobility transistors. The research combines materials engineering, atomic layer deposition fabrication techniques, and device physics to improve transistor performance, reliability, and scalability for future computing and memory technologies.
Publication output has grown substantially over the last decade, rising from about 12 papers per year in 2017 to a peak of 35 in 2025, with some year-to-year fluctuation but an overall upward trend.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Ferroelectric Field Effect Transistor With Annealing-Free Ultralow Process Temperature (250 °C) of Hf <sub> <i>x</i> </sub> Zr <sub> 1- <i>x</i> </sub> O <sub>2</sub> for BEOL Application
IEEE Transactions on Electron Devices · 2026
- Electrically Tunable WSe <sub>2</sub> /α-In <sub>2</sub> Se <sub>3</sub> van der Waals Ferroelectric Heterostructure for Reconfigurable Photodetection and Neuromorphic Computing
ACS Applied Materials & Interfaces · 2026
- Role of Rare‐Earth Lanthanum Doping on Electrical Performance and Stability of Atomic Layer Deposition Processed Indium Oxide Thin‐Film Transistors
Advanced Electronic Materials · 2026
- Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm <sup>2</sup> /V∙s at Room Temperature
IEEE Electron Device Letters · 2026
- The Ballistic Injection in IGZO GAA VFET with Scaled Source/Drain Extension and Its Impact on On-Current Enhancement
IEEE Electron Device Letters · 2026
- New insights into dual-gate ISFET performance through channel and structural engineering
Journal of Physics D Applied Physics · 2026
- High-Mobility and High-Reliability Top-Gate Oxide Semiconductor Transistors by Oxygen Engineering
arXiv (Cornell University) · 2026
- High-Mobility and High-Reliability Top-Gate Oxide Semiconductor Transistors by Oxygen Engineering
arXiv (Cornell University) · 2026
- Boosting ALD In <sub>2</sub> O <sub>3</sub> Transistor Performance Using Hybrid H <sub>2</sub> O and O <sub>3</sub> Co-Reactant
IEEE Transactions on Electron Devices · 2026
- Hidden structural phase transition assisted ferroelectric domain orientation engineering in Hf0.5Zr0.5O2 films
Nature Communications · 2025
- Van der Waals Ferroelectric CuCrP<sub>2</sub>S<sub>6</sub>‐Enabled Hysteresis‐Free Negative Capacitance Field‐Effect Transistors
Advanced Materials · 2025
- Unveiling the polarization switching pathway through tetragonal phase as a metastable intermediate state in ferroelectric HfxZr1-xO2 thin film
Nature Communications · 2025
- Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices
Science Advances · 2025
- In₂O₃–ZnO Superlattice Transistors by Atomic Layer Deposition With High Field-Effect Mobility
IEEE Electron Device Letters · 2025
- Back-End-of-Line Compatible 2T1C Memory Cell With InGaZnO Thin-Film Transistors and Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Capacitors
IEEE Transactions on Electron Devices · 2025
- IEEE Transactions on Electron Devices×29
- IEEE Electron Device Letters×20
- arXiv (Cornell University)×13
- Applied Physics Letters×8
- Nano Letters×5
- Suman Datta
Engineering · Purdue University West Lafayette
- Eunseon Yu
Engineering · Purdue University West Lafayette
- P. D. Ye
Engineering · Purdue University West Lafayette
- Haesung Kim
Engineering · Purdue University West Lafayette
- H.Y. Yu
Engineering · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile