H.Y. Yu
Engineering · The Ohio State University
Publications
386
Citations
9,216
Est. group size
—
Recurring co-author estimate
Active years
34
Publishing since 1993
This researcher's core work focuses on wide-bandgap semiconductor devices, particularly GaN- and Ga2O3-based transistors, diodes, and sensors used in power electronics and high-frequency applications. The publication record also includes a number of unrelated titles in medicine, agriculture, and materials science, suggesting the name may be associated with multiple distinct researchers or collaborative side projects outside the core semiconductor focus.
Publication output was modest and variable from 2017–2022 but increased sharply from 2023 onward, peaking in 2024 and remaining high through 2025.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- A High Sensitivity and Linearity AlGaN/GaN SBD Thermal Sensor With Partially Recessed AlGaN Barrier Layer Near the Pt Anode
IEEE Sensors Journal · 2026
- 2.86-kV vertical Cu2O/Ga2O3 heterojunction diodes with stepped double-layer structure
Journal of Alloys and Compounds · 2025
- Microstructural evolution and infrared emissivity of atmospheric plasma-sprayed Y2Ti2O7 pyrochlore coatings
Journal of the European Ceramic Society · 2025
- Small extracellular vesicles derived from hair follicle neural crest stem cells enhance perineurial cell proliferation and migration via the TGF-β/SMAD/HAS2 pathway
Neural Regeneration Research · 2025
- Spatiotemporal changes of cultivated land utilization in black soil region, China based on geo-information Tupu
Scientific Reports · 2025
- Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and <i>in situ</i> O3 treatment
Applied Physics Letters · 2025
- Failure behavior and bearing capacity of steel dual-angle under biaxial eccentric load
Journal of Constructional Steel Research · 2025
- A Novel Discrete GaN/AlGaN/GaN-Based Schottky Diode Thermal Sensor With a Sensitivity Up to 13.3 mV/K
IEEE Electron Device Letters · 2025
- Flexible transparent layered metal oxides for organic devices
Journal of Materials Chemistry C · 2025
- Optimization of electric field distribution for AlGaN/GaN MIS-HEMT with thick i-GaN cap layer
Applied Physics Letters · 2025
- Numerical Investigation on Electrothermal Performance of AlGaN/GaN HEMTs with Nanocrystalline Diamond/SiNx Trench Dual-Passivation Layers
Nanomaterials · 2025
- Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications
2025
- High-Performance Cu<sub>2</sub>O/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diodes for Power Electronics
2025
- Dynamic Performance Analysis of GaN Digital Logic Gate Circuits for MHz-Level Operation via CTL-Based ICs Platform
2025
- Monolithic integrated <b> <i>β</i> </b>-Ga2O3 inverters using charge trapping technique
Applied Physics Letters · 2025
- Applied Physics Letters×14
- Scientific Reports×3
- Journal of Materials Chemistry C×2
- Journal of Alloys and Compounds×2
- Advanced Electronic Materials×2
- Suman Datta
Engineering · Purdue University West Lafayette
- Muhammad Masuduzzaman
Engineering · Purdue University West Lafayette
- Nathan J. Conrad
Engineering · Purdue University West Lafayette
- P. D. Ye
Engineering · Purdue University West Lafayette
- Mengwei Si
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile