Suman Datta

Engineering · Purdue University West Lafayette

Established · publishing since 1977

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing Nanowire Synthesis and Applications

Publications

640

Citations

24,383

Est. group size

—

Recurring co-author estimate

Active years

Publishing since 1977

Research summary

AI-generated

Suman Datta's research focuses on the design and physics of advanced semiconductor devices, especially transistors and memory technologies that could extend or replace conventional computer chip components. Recent work centers on ferroelectric transistors (devices that use special materials to store information persistently, similar to memory), 3D-stackable DRAM (a computer memory architecture), oxide-semiconductor transistors, and hardware for emerging computing approaches like neuromorphic (brain-inspired) and Ising-machine-based problem solving. This work sits at the intersection of materials science, device engineering, and circuit design for next-generation memory and computing hardware.

Ferroelectric transistors and memory devices3D-stackable and processing-in-memory DRAMOxide-semiconductor transistors (e.g., indium oxide channels)Emerging computing architectures (neuromorphic, Ising machines, compute-in-memory)Device modeling and reliability (machine learning-assisted compact models, noise, stress effects)

Publication output was fairly steady at 35-40 papers/year from 2017-2020, declined to around 23-28 papers/year from 2021-2023, then rose again to about 40 in 2024 before tapering in 2025-2026, suggesting a somewhat variable but still active publication pace over the last decade.

Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026

Publication cadence

Publications per year over the last 10 years — averaging 23.6/year recently

Recent publications

Row Hammer Effect and Floating Body Effect of Monolithic 3D Stackable 1T1C DRAM
2026
Revealing Phonon Bridge Effect for Amorphous vs Crystalline Metal–Silicide Layers at Si/Ti Interfaces by a Machine Learning Potential
ACS Applied Electronic Materials · 2026
Revealing Phonon Bridge Effect for Amorphous vs Crystalline Metal–Silicide Layers at Si/Ti Interfaces by a Machine Learning Potential
ACS Applied Electronic Materials · 2026
Open DRAM Model—Part I: Cross-Layer Device, Array, and Circuit Analysis With BL-to-BL Coupling Mitigation for 4F 2 VCT DRAM
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 2026
Open DRAM Model—Part II: Enabling Processing-in-Memory in 3-D DRAM
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 2026
Jitter Reduction in Voltage Controlled Oscillators for Clocking at Cryogenic Temperature
2026
First Demonstration of High-Performance and Extremely Stable W-Doped In₂O₃ Gate-All-Around (GAA) Nanosheet FET
IEEE Transactions on Electron Devices · 2025
Amorphous Indium Oxide Channel FEFETs With Write Voltage of 0.9 V and Endurance >1012 for Refresh-Free Embedded Memory
IEEE Transactions on Electron Devices · 2025
The First Switch Effect in Ferroelectric Field-Effect Transistors
IEEE Transactions on Device and Materials Reliability · 2025
Emerging applications: Neuromorphic computing and reservoir computing
MRS Bulletin · 2025
Addressing the Connectivity Bottleneck With BEOL FeFETs for 3-D CMOS + X Ising Machines
IEEE Transactions on Electron Devices · 2025
FIMA: A Scalable Ferroelectric Compute-in-Memory Annealer for Accelerating Boolean Satisfiability
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 2025
Extreme EOT Scaling in Tungsten-Doped In 2 O 3 MOSFETs for Enhanced Stability and Drive Current
IEEE Transactions on Electron Devices · 2025
Machine Learning-Assisted Compact Modeling of AC Stress-Induced Bias Temperature Instability in Top- and Bottom-Gate W-Doped In₂O₃ Channel Semiconductor Transistors
IEEE Transactions on Electron Devices · 2025
Impact of the Endurance Measurement Methodology on Ferroelectric Field Effect Transistor Under the Capacitive Nondestructive Read
IEEE Transactions on Electron Devices · 2025

Publishes in

IEEE Transactions on Electron Devices×36
IEEE Electron Device Letters×19
arXiv (Cornell University)×13
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits×9
Nature Electronics×7

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This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 20, 2026.

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