Eunseon Yu
Engineering · Purdue University West Lafayette
Publications
25
Citations
382
Est. group size
—
Recurring co-author estimate
Active years
25
Publishing since 2000
Eunseon Yu's research focuses on advanced semiconductor devices, including specialized transistor designs such as FinFETs, nanowire transistors, and one-transistor DRAM (dynamic random-access memory) structures. The work explores materials like silicon-germanium (SiGe) and germanium to improve transistor performance for future computing technologies, including energy-efficient memory and brain-inspired (neuromorphic) computing hardware. This research is aimed at pushing semiconductor devices toward smaller scales (below 10 nanometers) and higher speeds (terahertz-range operation).
Publication output peaked between 2017 and 2019, then declined sharply, with only sporadic single publications in recent years and none in some years, indicating a slowing pace of research activity over the last decade.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect
IEEE Electron Device Letters · 2019
- A Band-Engineered One-Transistor DRAM With Improved Data Retention and Power Efficiency
IEEE Electron Device Letters · 2019
- Design and Characterization of Semi-Floating-Gate Synaptic Transistor
Micromachines · 2019
- A Silicon-Compatible Synaptic Transistor Capable of Multiple Synaptic Weights toward Energy-Efficient Neuromorphic Systems
Electronics · 2019
- Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime
ETRI Journal · 2019
- Characterization and Optimization of Inverted-T FinFET Under Nanoscale Dimensions
IEEE Transactions on Electron Devices · 2018
- Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes
IEEE Transactions on Electron Devices · 2018
- SiGe Heterojunction FinFET Towards Tera-Hertz Applications
Journal of the Korean Physical Society · 2018
- A Highly Scalable and Energy-Efficient 1T DRAM Embedding a SiGe Quantum Well Structure for Significant Retention Enhancement
2018
- Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor
Journal of Nanoscience and Nanotechnology · 2018
- An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures
Physica B Condensed Matter · 2017
- Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory
2017
- Design of a High-Hole-Mobility Ge Transistor for Si-Driven Heterogeneous Integrated Circuits
IDEC Journal of Integrated Circuits and Systems · 2017
- A Study on the Career Education and Guidance Teachers’ Occupational Identity Based on the Grounded Theory
The Journal of Career Education Research · 2017
- Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel
Japanese Journal of Applied Physics · 2016
- IEEE Transactions on Electron Devices×3
- IEEE Electron Device Letters×3
- Scientific Reports×1
- Frontiers in Neuroscience×1
- ACS Applied Electronic Materials×1
- Suman Datta
Engineering · Purdue University West Lafayette
- Shabnam Ghotbi
Engineering · Purdue University West Lafayette
- Mengwei Si
Engineering · Purdue University West Lafayette
- H.Y. Yu
Engineering · The Ohio State University
- Muhammad Masuduzzaman
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
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