Haesung Kim
Engineering · Purdue University West Lafayette
Publications
66
Citations
538
Est. group size
—
Recurring co-author estimate
Active years
38
Publishing since 1989
Haesung Kim works on semiconductor devices, focusing on thin-film transistors made from amorphous oxide materials (like InGaZnO) and ferroelectric field-effect transistors used for next-generation memory devices such as flash and NAND memory. The research examines how defects, charge traps, and interfacial layers affect device performance, reliability, and switching speed, using detailed electrical characterization techniques. This work is relevant to improving low-power, high-density memory and display technologies.
Publication output has grown steadily over the past decade, rising from about 1-3 papers per year in 2017-2021 to 5-7 papers per year in 2023-2026.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Characterization of Low-Temperature Intrinsic Field-Effect Mobility With Contact Resistances in Amorphous InGaZnO Thin Film Transistors
IEEE Transactions on Electron Devices · 2026
- Impact of proton irradiation on SiNx and Si–SiO2 interfaces in FLASH memory cell
Nuclear Engineering and Technology · 2026
- Unveiling charge trapping dynamics in SiO2/HfZrOX–based ferroelectric field–effect–transistors to minimize read–after–write latency
Current Applied Physics · 2026
- Characterization of trap dynamics via transient response in amorphous InGaZnO thin-film transistors
Applied Physics Letters · 2026
- Ferroelectric transistors for low-power NAND flash memory
Nature · 2025
- Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in Hf <sub>x</sub> Zr <sub>1‐x</sub> O <sub>2</sub> /SiO <sub>2</sub> Interface in Ferroelectric Field‐Effect‐Transistor
Advanced Electronic Materials · 2025
- Analysis of operation delay and switching speed limitation due to source/drain resistance and subgap density of states in amorphous InGaZnOx/HfZrOx ferroelectric thin-film transistor
Solid-State Electronics · 2025
- Defect-mediated enhancement of memory window in IGZO-channel ferroelectric field effect transistors
Materials Science in Semiconductor Processing · 2025
- Photonic I–V Technique With Photogating Effect for Extended Extraction of Subgap Density of States in Amorphous Oxide Semiconductor TFTs
IEEE Transactions on Electron Devices · 2025
- Quantitative Analysis of Endurance-Dependent Charge Trapping Dynamics in Ferroelectric Field-Effect Transistors with Temperature Effects
2025
- Exploring low-frequency noise dynamics in a-IGZO TFTs: Unveiling the impact of contact metal variations for advanced semiconductor applications
Solid-State Electronics · 2025
- Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell
IEEE Electron Device Letters · 2024
- Exploration of structural influences on the ferroelectric switching characteristics of ferroelectric thin-film transistors
Nanoscale · 2024
- Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer
Applied Physics Letters · 2024
- Photovoltaic Effect De-Embedded Photonic <i>C</i>–<i>V</i> Characterization of Subgap Density of States in Amorphous Oxide Semiconductor Thin-Film Transistors
IEEE Transactions on Electron Devices · 2024
- IEEE Transactions on Electron Devices×5
- Solid-State Electronics×5
- Nature Communications×2
- IEEE Electron Device Letters×2
- Applied Physics Letters×2
- Mengwei Si
Engineering · Purdue University West Lafayette
- P. D. Ye
Engineering · Purdue University West Lafayette
- Jian-Yu Lin
Engineering · Purdue University West Lafayette
- Dongqi Zheng
Engineering · Purdue University West Lafayette
- Zehao Lin
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile