Dongqi Zheng
Engineering · Purdue University West Lafayette
Publications
36
Citations
897
Est. group size
~11
Recurring co-author estimate
Active years
23
Publishing since 2003
Dongqi Zheng's work centers on the fabrication and characterization of nanoscale electronic and optoelectronic materials, especially ultrathin transistors made from oxide semiconductors like indium oxide, ferroelectric memory and sensing devices, and solar cell materials that combine mechanical and light-driven effects (piezo-phototronics). More recent work extends into carbon-based light-emitting nanoparticles and machine-learning-based defect detection for sensors. This research is largely experimental, involving thin-film growth techniques (such as atomic layer deposition) and device testing.
Publication output grew steadily from 2018 through a peak in 2023, followed by a dip in 2024 and a partial rebound in 2025.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Multicolor room-temperature phosphorescent carbon dots with ultralong lifetime in aqueous environments for information anti-counterfeiting and delay illumination
Chemical Engineering Journal · 2025
- Multicolor Room-Temperature Phosphorescent Carbon Dots with Ultralong Lifetime in Aqueous Environments for Information Anti-Counterfeiting and Delay Illumination
SSRN Electronic Journal · 2025
- A Real-Time On-Device Defect Detection Framework for Laser Power-Meter Sensors via Unsupervised Learning
arXiv (Cornell University) · 2025
- Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO<sub>2</sub>-Based Artificial Neurons
Nano Letters · 2023
- Epitaxial Growth of Aurivillius Bi<sub>3</sub>Fe<sub>2</sub>Mn<sub>2</sub>O<sub><i>x</i></sub> Supercell Thin Films on Silicon
Crystal Growth & Design · 2023
- Ultrathin Atomic-Layer-Deposited In<sub>2</sub>O<sub>3</sub> Radio-Frequency Transistors with Record High f<sub>T</sub> of 36 GHz and BEOL Compatibility
2023
- Ultra-thin atomic-layer-deposited InGaZnO thin film transistors with Back-End-of-Line Compatibility
2023
- Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency
IEEE Transactions on Electron Devices · 2022
- Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions
Journal of Applied Physics · 2022
- Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure
2022
- Asymmetric Metal/α-In<sub>2</sub>Se<sub>3</sub>/Si Crossbar Ferroelectric Semiconductor Junction
ACS Nano · 2021
- Controlling Threshold Voltage of CMOS SOI Nanowire FETs With Sub-1 nm Dipole Layers Formed by Atomic Layer Deposition
IEEE Transactions on Electron Devices · 2021
- Ferroelectric FET Based Coupled-Oscillatory Network for Edge Detection
IEEE Electron Device Letters · 2021
- Why In<sub>2</sub>O<sub>3</sub> Can Make 0.7 nm Atomic Layer Thin Transistors
Nano Letters · 2020
- High-performance piezo-phototronic multijunction solar cells based on single-type two-dimensional materials
Nano Energy · 2020
- IEEE Transactions on Electron Devices×5
- Nano Letters×2
- ACS Nano×2
- IEEE Electron Device Letters×2
- Advanced Materials×1
- Adam Charnas
Engineering · Purdue University West Lafayette
- Zehao Lin
Engineering · Purdue University West Lafayette
- Jian-Yu Lin
Engineering · Purdue University West Lafayette
- Haesung Kim
Engineering · Purdue University West Lafayette
- Mengwei Si
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile