Tianshi Liu
Engineering · The Ohio State University
Publications
53
Citations
567
Est. group size
~13
Recurring co-author estimate
Active years
34
Publishing since 1992
Tianshi Liu's research focuses on silicon carbide (SiC) power semiconductor devices, particularly power MOSFETs (a type of transistor used to switch high voltages and currents efficiently). Work covers device reliability, degradation under electrical stress, gate oxide performance, and integration of SiC devices with control circuitry for power converters used in applications like electric vehicles and power supplies. Note: one unrelated publication on soybean genetics and one on wildlife activity rhythms appear in the record, likely due to author-name overlap rather than this researcher's core work.
Publication output rose from a low base around 2017-2019, peaked in 2021-2022 with 9 papers each year, and has since declined to around 2-4 papers per year in 2023-2025.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Investigation on Degradation of 1.2-kV Planar and Trench SiC MOSFETs Under Repetitive Pulse Current Stress of Body Diode
IEEE Transactions on Power Electronics · 2025
- A Coding SNP in <i>GmPM30</i> Enhances Soybean Salinity Tolerance and Yield through the GmLEA1‐GmPM30‐GmLEC1 Module
Advanced Science · 2025
- A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25–600 V mixed-mode SiC CMOS technology
Analog Integrated Circuits and Signal Processing · 2024
- Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress
2024
- Evaluation of 1.2-kV Rated SiC Trench MOSFETs Under High-Voltage Switching Impulses
2024
- Threshold Voltage Adjustment of Commercial SiC MOSFETs During Gate Oxide Screening By Low Field Pulse
2024
- Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs
Materials Science in Semiconductor Processing · 2023
- Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs
2023
- Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs
2023
- A 400V Buck Converter Integrated with Gate- Drivers and Low-Voltage Control in a 25V- 600V Mixed-Mode SiC CMOS Technology
Research Square · 2023
- A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching
Materials · 2022
- Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs
Materials · 2022
- SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology
IEEE Journal of the Electron Devices Society · 2022
- Seasonal variation of daily activity rhythm of leopard cats (<i>Prionailurus bengalensis</i>) and their potential prey in Neixiang Baotianman National Nature Reserve of Henan Province, China
Biodiversity Science · 2022
- Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs
2022
- IEEE Journal of the Electron Devices Society×2
- Materials×2
- Energies×1
- Journal of Forestry Research×1
- IEEE Transactions on Power Electronics×1
- Monikuntala Bhattacharya
Engineering · The Ohio State University
- Dallas Morisette
Engineering · Purdue University West Lafayette
- Hengyu Yu
Engineering · The Ohio State University
- Limeng Shi
Engineering · The Ohio State University
- Michael Jin
Engineering · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
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