LabCompass

Hengyu Yu

Engineering · The Ohio State University

Early career · publishing since 2019Rising activity

Publications

54

Citations

562

Est. group size

~7

Recurring co-author estimate

Active years

8

Publishing since 2019

Research summary
AI-generated

Hengyu Yu's research focuses on silicon carbide (SiC) power semiconductor devices, including MOSFETs, thyristors, and diodes used in power electronics for applications like electric vehicles and power conversion systems. The work spans device design, degradation and reliability testing, junction temperature measurement, and modeling of device behavior under electrical and radiation stress. A smaller portion of the work also touches on dependability and timeliness in Internet-of-Vehicles (IoV) communication networks.

Silicon carbide (SiC) power devicesPower MOSFET design and reliabilityDevice degradation and stress testingJunction temperature sensing and thermal managementVehicular network dependability

Publication output has grown notably over the past decade, rising from near-zero activity before 2019 to a sustained pace of roughly 8-13 papers per year in 2022-2025.

Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026

Publication cadence
Publications per year over the last 10 years — averaging 7.8/year recently
17182019: 1 publication192020: 9 publications202021: 5 publications212022: 9 publications222023: 8 publications232024: 13 publications13242025: 8 publications252026: 1 publication26
Recent publications
Publishes in
  • IEEE Transactions on Electron Devices×10
  • Electronics×5
  • IEEE Transactions on Power Electronics×3
  • IEEE Journal of Emerging and Selected Topics in Power Electronics×3
  • Micromachines×2
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This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 19, 2026.

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