Hengyu Yu
Engineering · The Ohio State University
Publications
54
Citations
562
Est. group size
~7
Recurring co-author estimate
Active years
8
Publishing since 2019
Hengyu Yu's research focuses on silicon carbide (SiC) power semiconductor devices, including MOSFETs, thyristors, and diodes used in power electronics for applications like electric vehicles and power conversion systems. The work spans device design, degradation and reliability testing, junction temperature measurement, and modeling of device behavior under electrical and radiation stress. A smaller portion of the work also touches on dependability and timeliness in Internet-of-Vehicles (IoV) communication networks.
Publication output has grown notably over the past decade, rising from near-zero activity before 2019 to a sustained pace of roughly 8-13 papers per year in 2022-2025.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Precise and Fast Real-Time Measurement of Junction Temperature in SiC Power MOSFETs
IEEE Transactions on Industry Applications · 2024
- Theoretical Analysis and Experimental Characterization of 1.2-kV 4H-SiC Planar Split-Gate MOSFET With Source Field Plate
IEEE Transactions on Electron Devices · 2023
- Modeling Irradiation-Induced Degradation for 4H-SiC Power MOSFETs
IEEE Transactions on Electron Devices · 2023
- An integrated dependability guarantee provisioning for cluster‐based IoV networks with slicing
IET Intelligent Transport Systems · 2023
- A Novel 4H-SiC JBS-Integrated MOSFET With Self-Pinching Structure for Improved Short-Circuit Capability
IEEE Transactions on Electron Devices · 2022
- 1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits
IET Power Electronics · 2022
- Joint timeliness and security provisioning for enhancement of dependability in Internet of Vehicle system
International Journal of Distributed Sensor Networks · 2022
- Modeling and Analysis of SiC GTO Thyristor’s Dynamic Turn-On Transient
IEEE Transactions on Electron Devices · 2022
- Exploration on Electrical Isolation Between High-Voltage SiC Thyristor and Small-Signal Devices for Smart Power Devices
IEEE Transactions on Electron Devices · 2022
- Degradation of Si/SiC Hybrid Switch under AC power cycle
2022 IEEE Applied Power Electronics Conference and Exposition (APEC) · 2022
- Online Junction Temperature Measurement Of SiC MOSFET In Practical Converters
2022 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific) · 2022
- On Pursuit of Privacy Preservation for Dependable Offloading in VECON: An Optimization Perspective
2022 IEEE Globecom Workshops (GC Wkshps) · 2022
- Timeliness Improvement of Information Interaction for IoVs Using Mini-Batch Identification Strategy
2022 IEEE 25th International Conference on Intelligent Transportation Systems (ITSC) · 2022
- Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode
IEEE Transactions on Electron Devices · 2021
- Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-Load Current Stress
IEEE Journal of Emerging and Selected Topics in Power Electronics · 2021
- IEEE Transactions on Electron Devices×10
- Electronics×5
- IEEE Transactions on Power Electronics×3
- IEEE Journal of Emerging and Selected Topics in Power Electronics×3
- Micromachines×2
- Tianshi Liu
Engineering · The Ohio State University
- Dallas Morisette
Engineering · Purdue University West Lafayette
- Monikuntala Bhattacharya
Engineering · The Ohio State University
- Michael Jin
Engineering · The Ohio State University
- Limeng Shi
Engineering · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile