Dallas Morisette
Engineering · Purdue University West Lafayette
Publications
41
Citations
1,002
Est. group size
—
Recurring co-author estimate
Active years
26
Publishing since 2001
Dallas Morisette's research focuses on power semiconductor devices, particularly those made from silicon carbide (SiC) and gallium oxide (Ga2O3), which are materials used to build more efficient and durable electronic switches for high-power applications like electric vehicles and power grids. Much of the work examines the interfaces between these semiconductors and insulating oxide layers, studying defects (traps) that can affect device reliability, as well as new transistor designs such as trench and tri-gate MOSFETs. This research is aimed at improving the performance, robustness, and manufacturability of next-generation power electronics.
Publication output rose to a peak around 2018 and has gradually declined since, with sparse activity from 2023 onward.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- A Fully Self-Aligned SiC Trench MOSFET with 0.5 μm Channel Pitch
Key engineering materials · 2023
- Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors
Journal of Applied Physics · 2021
- Demonstration of Constant-Gate-Charge Scaling to Increase the Robustness of Silicon Carbide Power MOSFETs
IEEE Transactions on Electron Devices · 2021
- Analytical electron microscopy of (2¯01) <i>β</i>-Ga2O3/SiO2 and (2¯01) <i>β</i>-Ga2O3/Al2O3 interface structures in MOS capacitors
Journal of Applied Physics · 2021
- Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC
IEEE Electron Device Letters · 2020
- The Tri-Gate MOSFET: A New Vertical Power Transistor in 4H-SiC
IEEE Electron Device Letters · 2020
- Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors
Micron · 2020
- Constant-Gate-Charge Scaling for Increased Short-Circuit Withstand Time in SiC Power Devices
2020
- Characterization of Near-Interface Traps at Dielectric/SiC Interfaces Using CCDLTS
Materials science forum · 2019
- Revolutionary Innovation in SiC Power Devices
2019
- Trap Characterization of ALD Al<sub>2</sub>O<sub>3</sub>/4H-SiC Metal-Oxide-Semiconductor Interfaces
ECS Meeting Abstracts · 2019
- Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics
Applied Physics Letters · 2018
- Design Guidelines for Superjunction Devices in the Presence of Charge Imbalance
IEEE Transactions on Electron Devices · 2018
- Comparison of Single- and Double-Trench UMOSFETs in 4H-SiC
Materials science forum · 2018
- Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance
Materials science forum · 2018
- Journal of Applied Physics×4
- Materials science forum×4
- IEEE Transactions on Electron Devices×3
- IEEE Electron Device Letters×2
- Journal of Electronic Materials×2
- Tianshi Liu
Engineering · The Ohio State University
- Monikuntala Bhattacharya
Engineering · The Ohio State University
- Hengyu Yu
Engineering · The Ohio State University
- Michael Jin
Engineering · The Ohio State University
- Limeng Shi
Engineering · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile