Seungheon Shin
Physics and Astronomy · The Ohio State University
Publications
16
Citations
14
Est. group size
~1
Recurring co-author estimate
Active years
23
Publishing since 2004
Seungheon Shin works on advanced semiconductor transistor technology, focusing on ultra-wide bandgap AlGaN (aluminum gallium nitride) materials used for high-power and high-frequency electronic devices. This research aims to build transistors that can handle very high voltages and switching frequencies while managing heat more effectively, which is relevant to power electronics and radio-frequency (RF) applications. The work involves designing device structures, improving material interfaces, and characterizing electrical breakdown and thermal performance.
Publication activity is very recent and concentrated, with no recorded output before 2025 and a sharp increase in 2025-2026, suggesting a newly active or newly tracked research output rather than a steady long-term trend.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Scaled ultra-wide bandgap AlGaN polarization-graded FET with ultra-thin buffer layer
APL Electronic Devices · 2026
- Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices
Open MIND · 2026
- Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices
arXiv (Cornell University) · 2026
- High Breakdown Field Multi-kV UWBG AlGaN Transistors
arXiv (Cornell University) · 2026
- High Breakdown Field Multi-kV UWBG AlGaN Transistors
arXiv (Cornell University) · 2026
- High breakdown field multi-kV UWBG AlGaN transistors
APL Electronic Devices · 2026
- AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2
arXiv (Cornell University) · 2026
- AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2
arXiv (Cornell University) · 2026
- Ultra-Wide Bandgap Al <sub>0.85</sub> Ga <sub>0.15</sub> N/Al <sub>0.65</sub> Ga <sub>0.35</sub> N HEMTs with Baliga Figure of Merit > 0.5 GW/cm <sup>2</sup> leveraging LPCVD Si <sub>x</sub> N <sub>y</sub> Passivation and Field Plates
2026
- High breakdown electric field (&gt;5 MV/cm) in UWBG AlGaN transistors
APL Electronic Devices · 2025
- <i>(Invited)</i> Ultra-Wide Bandgap AlGaN Alloys for RF & Power Lateral Transistors
ECS Meeting Abstracts · 2025
- Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer
arXiv (Cornell University) · 2025
- Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz
arXiv (Cornell University) · 2025
- Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer
arXiv (Cornell University) · 2025
- Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz
arXiv (Cornell University) · 2025
- arXiv (Cornell University)×9
- APL Electronic Devices×3
- ECS Meeting Abstracts×1
- Open MIND×1
- Govardan Gopakumar
Physics and Astronomy · Purdue University West Lafayette
- Robert Kaplar
Physics and Astronomy · The Ohio State University
- Vishank Talesara
Physics and Astronomy · The Ohio State University
- Andrew Armstrong
Physics and Astronomy · The Ohio State University
- Rajendra Kumar
Physics and Astronomy · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile