Peide D. Ye
Engineering · Purdue University West Lafayette
Publications
442
Citations
25,886
Est. group size
~40
Recurring co-author estimate
Active years
29
Publishing since 1998
Peide D. Ye's research focuses on semiconductor devices and materials, particularly novel electronic components made from 2D materials (materials that are only a few atoms thick), oxide semiconductors like indium oxide and gallium oxide, and exotic materials like tellurene (a 2D form of tellurium). The work spans fundamental studies of electrical transport phenomena in these materials to practical applications in transistors, memory, and integrated circuits for computer chips.
Publication output has gradually declined over the past decade, from a peak of around 44 papers in 2018 to roughly 20-22 papers per year in recent years.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Characterization of Thermal Stability and Unexpected Mobility Enhancement in IGZO FETs Measured Up to 750 °C
IEEE Electron Device Letters · 2026
- Non-reciprocal magnetoresistances in chiral tellurium
Journal of Applied Physics · 2026
- Chirality Driven Ratchet Currents in Two-Dimensional Tellurene with an Asymmetric Grating
Open MIND · 2026
- Chirality Driven Ratchet Currents in Two-Dimensional Tellurene with an Asymmetric Grating
arXiv (Cornell University) · 2026
- Polar unidirectional magnetotransport in $p-$type tellurene from quantum geometry
Open MIND · 2026
- Polar unidirectional magnetotransport in $p-$type tellurene from quantum geometry
arXiv (Cornell University) · 2026
- Breakdown of Ohm’s Law by Disorders in Low-Dimensional Transistors
Nano Letters · 2026
- Asymmetric Reliability and Universality of Defect Formation in Oxide-Gated Ultra-Thin In<sub>2</sub>O<sub>3</sub>Vertical FETs for Monolithic 3-D Integration
2025
- Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators
Advanced Materials · 2025
- Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors
ACS Applied Materials & Interfaces · 2024
- Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source
Advanced Electronic Materials · 2024
- Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET
Solid-State Electronics · 2024
- BEOL-Compatible In<sub>2</sub>O<sub>3</sub> Thin-Film Transistor with Linear Dielectric ZrO<sub>2</sub> Achieving Dielectric Constant over 27 and Enhanced Field-Effect Mobility Up To 89.3 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>
2024
- 2D Piezoelectrics, pyroelectrics, and ferroelectrics
Journal of Applied Physics · 2023
- ALD Nanometer-Thin In<sub>2</sub>O<sub>3</sub> for BEOL Logic, Memory and RF Applications
2023
- IEEE Transactions on Electron Devices×33
- arXiv (Cornell University)×26
- Bulletin of the American Physical Society×26
- Nano Letters×20
- IEEE Electron Device Letters×20
- P. D. Ye
Engineering · Purdue University West Lafayette
- Suman Datta
Engineering · Purdue University West Lafayette
- H.Y. Yu
Engineering · The Ohio State University
- Muhammad Masuduzzaman
Engineering · Purdue University West Lafayette
- Mengwei Si
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile