Oğuz Odabaşı

Physics and Astronomy · University of Michigan

Mid career · publishing since 2016

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Ga2O3 and related materials Semiconductor Quantum Structures and Devices ZnO doping and properties

Publications

Citations

154

Est. group size

Recurring co-author estimate

Active years

Publishing since 2016

In context

Among 950 mid career Physics and Astronomy PIs within our index

Citations: 154cohort median 1,187

Publications / year (recent): 3.2cohort median 3.4

Typically publishes in teams of ~6 · 5% small-team papers (≤3 authors) · across 11 venues

Publication cadence

Publications per year over the last 10 years — averaging 3.2/year recently

Collaborators per year

Distinct co-authors at University of Michigan each year — a rough indication of whether the group around this researcher has been growing or contracting. An estimate from co-authorship, not a roster: collaborators are not necessarily lab members, and recent years can be under-counted while indexing catches up.

Recent publications

First demonstration of an N-polar high Al-content AlGaN channel HEMT grown by plasma-assisted molecular beam epitaxy
APL Electronic Devices · 2026
High-Performance MBE-Grown N-Polar GaN HEMTs on Bulk GaN With Simplified Backbarrier
IEEE Electron Device Letters · 2026
High-Temperature DC-RF Performance of N-Polar Deep Recess GaN HEMT With High-k HfSiO 2 Dielectric
IEEE Transactions on Electron Devices · 2026
Enhancement Mode N-Polar Deep Recess GaN HEMT With Record Small Signal Performance
IEEE Electron Device Letters · 2025
Recent Advancements in N-polar GaN HEMT Technology
Crystals · 2025
Investigation of ALD HfSiOx as gate dielectric on β -Ga2O3 (001)
Applied Physics Letters · 2024
Demonstration of Normally-Off N-Polar GaN Deep Recess HEMT
IEEE Microwave and Wireless Technology Letters · 2024
(010) β-(Alx, Ga1−x)2O3 growth using tritertiarybutylaluminum as Al gas precursor via hybrid molecular beam epitaxy
Applied Physics Letters · 2024
N-Polar GaN Deep Recess HEMT With Atomic Layer Deposition HfO2 as Gate Insulator
IEEE Transactions on Electron Devices · 2023
Improved drain lag by reduced surface current in GaN HEMT via an ultrathin HfO2 blanket layer
Semiconductor Science and Technology · 2023
Nanometer-Thick Insertion Layer for the Effective Passivation of Surface Traps and Improved Edge Acuity for AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices · 2023
Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices
IEEE Electron Device Letters · 2022
DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric
Semiconductor Science and Technology · 2022
Subwavelength Densely Packed Disordered Semiconductor Metasurface Units for Photoelectrochemical Hydrogen Generation
ACS Applied Energy Materials · 2022
Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements
IEEE Transactions on Device and Materials Reliability · 2022

Publishes in

IEEE Transactions on Electron Devices×5
IEEE Electron Device Letters×4
Applied Physics Letters×2
Semiconductor Science and Technology×2
Bilkent University Institutional Repository (Bilkent University)×2

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This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 25, 2026.

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