Md Irfan Khan
Physics and Astronomy · University of Michigan
Publications
27
Citations
229
Est. group size
~2
Recurring co-author estimate
Active years
9
Publishing since 2018
Typically publishes in teams of ~3 · 56% small-team papers (≤3 authors) · across 16 venues
- Enhancement of doping efficiency via polarization engineering in nitrogen-polar graded AlGaN grown by plasma-assisted molecular beam epitaxy
APL Materials · 2026
- Design and Development of Heterostructured In-Situ Aluminum Hybrid Composites for Enhanced Toughness
SSRN Electronic Journal · 2025
- Current status of underground hydrogen storage: Perspective from storage loss, infrastructure, economic aspects, and hydrogen economy targets
Journal of Energy Storage · 2024
- Comprehensive parametric study of CO2 sequestration in deep saline aquifers
Chemical Engineering Science · 2024
- Demonstration of controllable Si doping in N-polar AlN using plasma-assisted molecular beam epitaxy
Applied Physics Letters · 2024
- Impact of Relative Permeability Hysteresis and Capillary Pressure on Trapping Mechanisms During CO2 Sequestration in Saline Aquifers
2024
- [Poster Board #903] Implication of machine learning based reactive-transport simulation model to predict trapping mechanisms on CO<sub>2</sub> sequestration in deep saline aquifers
2024
- Mitigating Energy Inefficiency: A Cost-Effective Approach to Cool Attic Spaces in Lower-Income Households in the Southeastern United States
2024
- Growth and Characterization of Ultra-wide Bandgap III-N by Plasma-Assisted Molecular Beam Epitaxy
Deep Blue (University of Michigan) · 2024
- Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy
Materials Research Letters · 2023
- Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2023
- Demonstration of 82% relaxed In<sub>0.18</sub>G<sub>a0.82</sub>N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy
Physica Scripta · 2023
- Band alignment of sputtered and atomic layer deposited SiO2 and Al2O3 on ScAlN
Journal of Applied Physics · 2022
- Electrostatic characterization and threshold voltage modeling of inversion type InGaAs gate-all-around MOSFET
Journal of Computational Electronics · 2021
- Analytical drain current and performance evaluation for inversion type InGaAs gate-all-around MOSFET
AIP Advances · 2021
- IEEE Transactions on Electron Devices×2
- Journal of Energy Storage×1
- Chemical Engineering Science×1
- IEEE Electron Device Letters×1
- Materials Research Letters×1
- Md. Tanvir Hasan
Physics and Astronomy · University of Michigan
- Wu Lu
Physics and Astronomy · The Ohio State University
- Shahadat H. Sohel
Physics and Astronomy · The Ohio State University
- Aaron R. Arehart
Physics and Astronomy · The Ohio State University
- Siddharth Rajan
Physics and Astronomy · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 25, 2026.
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