Zhanbo Xia
Materials Science · The Ohio State University
Publications
69
Citations
2,785
Est. group size
~2
Recurring co-author estimate
Active years
32
Publishing since 1995
Zhanbo Xia's research focuses on wide-bandgap semiconductor materials, particularly gallium oxide (Ga2O3) and related compounds like aluminum gallium oxide and gallium nitride, which are used in high-power electronics and ultraviolet light detection devices. Work includes characterizing electrical and thermal properties of transistor structures (HEMTs) and developing deep-ultraviolet photodetectors grown using molecular beam epitaxy (MBE), a technique for depositing thin material layers with atomic precision.
Publication output peaked between 2018 and 2020 and has since declined markedly, with only one or two papers per year from 2021 onward.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Electrical and thermal characterisation of β-(Al<sup>x</sup>Ga<sup>(1-x)</sup>)<sup>2</sup>O<sup>3</sup>/Ga<sup>2</sup>O<sup>3</sup> HEMTs
Bristol Research (University of Bristol) · 2019
- MBE成長β-Ga 2 O 3 横方向深紫外検出器におけるゼロバイアス応答性の実証
Japanese Journal of Applied Physics · 2018
- arXiv (Cornell University)×17
- Applied Physics Letters×9
- IEEE Electron Device Letters×8
- IEEE Transactions on Electron Devices×4
- Applied Physics Express×3
- Lingyu Meng
Materials Science · The Ohio State University
- Kyle J. Liddy
Materials Science · The Ohio State University
- Darpan Verma
Materials Science · The Ohio State University
- Hongping Zhao
Materials Science · The Ohio State University
- Chandan Joishi
Materials Science · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
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