Chandan Joishi
Materials Science · The Ohio State University
Publications
76
Citations
1,820
Est. group size
~13
Recurring co-author estimate
Active years
12
Publishing since 2015
Chandan Joishi works on wide-bandgap and ultra-wide-bandgap semiconductor materials and devices, focusing on gallium oxide (Ga2O3), gallium nitride (GaN), and aluminum gallium nitride (AlGaN) based transistors and diodes. Much of the work involves improving electrical contacts, dielectric layers, and device structures (like HEMTs, MOSCAPs, and Schottky diodes) to make these materials more useful for high-power and high-frequency electronics. Earlier work also included germanium-based transistor materials and noise/charge-trapping characterization.
Publication output has grown fairly steadily over the last decade, rising from just 1 paper in 2017 to a sustained pace of about 8-12 papers per year from 2022 onward.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Extreme-Bandgap Al <sub>0.62</sub> Ga <sub>0.38</sub> N Thin Channel HEMT With AlN/GaN Digital-Alloy and Regrown GaN Ohmic Contacts
IEEE Electron Device Letters · 2026
- A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
arXiv (Cornell University) · 2026
- A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
arXiv (Cornell University) · 2026
- Supplementary information
Figshare · 2026
- Supplementary information
AIP Publishing · 2026
- Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer
AIP Publishing · 2026
- Low resistance ohmic contacts to Al-rich, AlGaN lateral transistors by MOCVD growth of heavily doped AlGaN alloys
2024
- Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al<sub>2</sub>O<sub>3</sub>/ β-Ga<sub>2</sub>O<sub>3</sub> MOSCAPs
IEEE Transactions on Electron Devices · 2023
- High Gain Planar Monopole Antenna Having Ultra Wideband Applications
2023
- Electrostatic Engineering of β-Ga<sub>2</sub>O<sub>3</sub> Trench Metal–Insulator–Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack
IEEE Transactions on Electron Devices · 2022
- Nb2O5 high-k dielectric enabled electric field engineering of <i>β</i>-Ga2O3 metal–insulator–semiconductor (MIS) diode
Journal of Applied Physics · 2021
- Nb$_{2}$O$_{5}$ high-k dielectric enabled electric field engineering of $\beta$-Ga$_{2}$O$_{3}$ metal-insulator-semiconductor (MIS) diode
arXiv (Cornell University) · 2021
- Charge trap layer enabled positive tunable <i>Vfb</i> in <b> <i>β</i> </b>-Ga2O3 gate stacks for enhancement mode transistors
Applied Physics Letters · 2020
- Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al<sub>2</sub>O<sub>3</sub> and GeO<sub><italic>x</italic></sub> ILs Using Ultrafast Charge Trap–Detrap Techniques
IEEE Transactions on Electron Devices · 2018
- Ultrafast PBTI characterization on Si-free gate last Ge nFETs with stable and ultrathin Al<inf>2</inf>O<inf>3</inf> IL
2017
- Applied Physics Letters×13
- arXiv (Cornell University)×12
- IEEE Electron Device Letters×7
- IEEE Transactions on Electron Devices×6
- Applied Physics Express×3
- Yuxuan Zhang
Materials Science · The Ohio State University
- Kyle J. Liddy
Materials Science · The Ohio State University
- Zhanbo Xia
Materials Science · The Ohio State University
- Chris Chae
Materials Science · The Ohio State University
- Hongping Zhao
Materials Science · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile