LabCompass

Kyle J. Liddy

Materials Science · The Ohio State University

Early career · publishing since 2019Rising activity

Publications

52

Citations

1,157

Est. group size

~1

Recurring co-author estimate

Active years

8

Publishing since 2019

Research summary
AI-generated

Kyle J. Liddy works on wide-bandgap and ultra-wide-bandgap semiconductor materials and devices, especially gallium oxide (Ga2O3) and gallium nitride (GaN) based transistors, diodes, and MOSFETs used in high-power and high-temperature electronics. The research combines material growth, device fabrication, and simulation to improve how these devices handle high voltages, heat, and radiation. This work is relevant to students interested in power electronics, semiconductor device physics, and materials for extreme environments.

Gallium oxide (Ga2O3) power devicesGaN/AlGaN high-electron-mobility transistors (HEMTs)High-temperature and high-voltage electronicsDielectric and interface engineering for semiconductorsDevice simulation and modeling (TCAD)

Publication output has grown substantially from essentially none in 2017-2018 to a steady high output averaging over 8 papers per year in the last five years, with a peak around 2022-2023.

Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026

Publication cadence
Publications per year over the last 10 years — averaging 8.2/year recently
17182019: 3 publications192020: 3 publications202021: 5 publications212022: 10 publications222023: 11 publications11232024: 5 publications242025: 9 publications252026: 6 publications26
Recent publications
Publishes in
  • arXiv (Cornell University)×6
  • IEEE Transactions on Electron Devices×5
  • APL Electronic Devices×4
  • IEEE Electron Device Letters×3
  • ECS Meeting Abstracts×3
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This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 19, 2026.

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