Kyle J. Liddy
Materials Science · The Ohio State University
Publications
52
Citations
1,157
Est. group size
~1
Recurring co-author estimate
Active years
8
Publishing since 2019
Kyle J. Liddy works on wide-bandgap and ultra-wide-bandgap semiconductor materials and devices, especially gallium oxide (Ga2O3) and gallium nitride (GaN) based transistors, diodes, and MOSFETs used in high-power and high-temperature electronics. The research combines material growth, device fabrication, and simulation to improve how these devices handle high voltages, heat, and radiation. This work is relevant to students interested in power electronics, semiconductor device physics, and materials for extreme environments.
Publication output has grown substantially from essentially none in 2017-2018 to a steady high output averaging over 8 papers per year in the last five years, with a peak around 2022-2023.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Growth of <i>a</i> -plane BaTiO3 on <i>a</i> -plane <i>β</i> -Ga2O3 by molecular-beam epitaxy
APL Materials · 2026
- Dielectric integration and interface defect engineering in β-Ga2O3 metal–oxide–semiconductor (MOS) devices
APL Electronic Devices · 2026
- Survivability of AlGaN/GaN HEMTs made with WNx- and Pt-based Gate Metal Stacks above 500 oC
IMAPSource Proceedings · 2026
- β-Ga2O3 MOSFETs on highly uniform 2-in. unintentionally doped vertical Bridgman substrates
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2026
- Near-ideal vertical β-Ga2O3 Schottky diode reverse leakage current via sputtered ultra-high-κ BaTiO3 dielectric field-management
APL Electronic Devices · 2025
- Radiation Response of Ga<sub>2</sub>O<sub>3</sub> MOSFETs Probed via Focused Particle Beams
Advanced Materials Technologies · 2025
- Progress Towards Demonstration of Ga <sub>2</sub> O <sub>3</sub> based Power Modules
2025
- Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length
IEEE Transactions on Electron Devices · 2024
- Current transport mechanisms of metal/TiO2/<i>β</i>-Ga2O3 diodes
Journal of Applied Physics · 2024
- Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2024
- Theoretical Power Figure-of-Merit in β -Ga<sub>2</sub>O<sub>3</sub> Lateral Power Transistors Determined Using Physics-Based TCAD Simulation
IEEE Transactions on Electron Devices · 2024
- High-Temperature Electronics Using $\beta{-}$ Ga203 FETs and AIGaN/GaN HEMTs
2023
- Transient Thermal Management of a β-Ga₂O₃ MOSFET Using a Double-Side Diamond Cooling Approach
IEEE Transactions on Electron Devices · 2023
- Vertical metal–dielectric–semiconductor diode on (001) β-Ga<sub>2</sub>O<sub>3</sub> with high-κ TiO<sub>2</sub> interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown
Applied Physics Express · 2023
- An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications
IEEE Journal of the Electron Devices Society · 2023
- arXiv (Cornell University)×6
- IEEE Transactions on Electron Devices×5
- APL Electronic Devices×4
- IEEE Electron Device Letters×3
- ECS Meeting Abstracts×3
- Chris Chae
Materials Science · The Ohio State University
- Zhanbo Xia
Materials Science · The Ohio State University
- Darpan Verma
Materials Science · The Ohio State University
- Lingyu Meng
Materials Science · The Ohio State University
- Chandan Joishi
Materials Science · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile