peide ye
Engineering · Purdue University West Lafayette
Publications
15
Citations
1
Est. group size
~1
Recurring co-author estimate
Active years
21
Publishing since 2006
This researcher works on advanced electronic materials and devices, particularly thin-film transistors made from oxide semiconductors like indium oxide and InGaZnO, as well as 2D materials such as tellurene. Their work spans device engineering (contact scaling, gate dielectrics, noise characterization) and fundamental studies of quantum transport phenomena and ferroelectric phase transitions in these materials. The research combines practical semiconductor device optimization with exploration of quantum-mechanical effects in thin, layered materials.
The provided data shows no recorded publications from 2017–2025 followed by a sudden cluster of 13 entries dated 2026, so a meaningful decade-long trend cannot be determined from this record.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Contact Length Scaling in In <sub>2</sub> O <sub>3</sub> and InGaZnO FETs: Critical Roles of Quantum Confinement and Indium Concentration Tuning
IEEE Transactions on Electron Devices · 2026
- <i>In Situ</i> Study of the Ferroelectric–Antiferroelectric Phase Transition in Hf <sub> 1– <i>x</i> </sub> Zr <sub> <i>x</i> </sub> O <sub>2</sub> at Elevated Temperatures up to 600 °C
Nano Letters · 2026
- Source data for: Giant negative magnetoresistance in tellurene driven by quantum geometry
Zenodo (CERN European Organization for Nuclear Research) · 2026
- Source data for: Giant negative magnetoresistance in tellurene driven by quantum geometry
Zenodo (CERN European Organization for Nuclear Research) · 2026
- Surface lone-pair polarization probed by quantum-geometric transport in tellurium
arXiv (Cornell University) · 2026
- Surface lone-pair polarization probed by quantum-geometric transport in tellurium
arXiv (Cornell University) · 2026
- A Unified Mechanism for Strain- and Anneal-Induced Oxygen-Vacancy Behavior in Oxide Semiconductors
Chemistry of Materials · 2026
- Gate-tunable giant negative magnetoresistance in tellurene driven by quantum geometry
PubMed Central · 2026
- A UnifiedMechanism for Strain- and Anneal-InducedOxygen-Vacancy Behavior in Oxide Semiconductors
Figshare · 2026
- Different Low-Frequency $(1 / f)$ Noise Origins in Atomically Thin ALD In <sub>2</sub> O <sub>3</sub> TFTs Determined by the Quantum-Confinement Effect
2026
- Record-Performance In <sub>2</sub> O <sub>3</sub> FETs with Ultra-Scaled Contacted Gate Pitch: Enabled by Higher-$\boldsymbol{k}$ HZO Linear Dielectric and Novel Ti-Seeded Contact
2026
- Terahertz field-driven nonlinear Hall effect and other second order transport phenomena in two-dimensional tellurene
arXiv (Cornell University) · 2026
- arXiv (Cornell University)×3
- Zenodo (CERN European Organization for Nuclear Research)×2
- IEEE Transactions on Electron Devices×1
- Nano Letters×1
- Chemistry of Materials×1
- Pai-Ying Liao
Engineering · Purdue University West Lafayette
- Sunbin Deng
Engineering · Purdue University West Lafayette
- Haiyan Wang
Engineering · Purdue University West Lafayette
- Zhuocheng Zhang
Engineering · Purdue University West Lafayette
- Jie Zhang
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile