Pai-Ying Liao
Engineering · Purdue University West Lafayette
Publications
28
Citations
868
Est. group size
~13
Recurring co-author estimate
Active years
7
Publishing since 2018
Pai-Ying Liao's research focuses on next-generation electronic devices, particularly transistors built from thin-film semiconductor materials like indium oxide, gallium oxide, and two-dimensional layered materials. A major theme is understanding and controlling heat generation ('self-heating') in miniaturized transistors, as well as exploring how electrical polarization (ferroelectricity) can be used in ultrathin materials for memory and sensing applications. This work is relevant to improving computer chip performance and enabling new types of electronic memory.
Publication output has been variable over the past decade, with a notable peak of 13 outputs in 2022 followed by a decline to about 2 per year in 2023-2024.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Reduced temperature in lateral (Al<i>x</i>Ga1−<i>x</i>)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
Applied Physics Letters · 2024
- Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In<sub>2</sub>O<sub>3</sub> FETs Toward Monolithic 3-D Integration
IEEE Transactions on Electron Devices · 2023
- Ionic Control over Ferroelectricity in 2D Layered van der Waals Capacitors
ACS Applied Materials & Interfaces · 2022
- A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current<sub/> <sub/> <sub/>
IEEE Electron Device Letters · 2022
- Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma
Applied Physics Letters · 2022
- Alleviation of Self-Heating Effect in Top-Gated Ultrathin In<sub>2</sub>O<sub>3</sub> FETs Using a Thermal Adhesion Layer
IEEE Transactions on Electron Devices · 2022
- Selenene and Tellurene
Elsevier eBooks · 2022
- Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In<sub>2</sub>O<sub>3</sub> FETs
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022
- BEOL-Compatible, ALD-grown In<sub>2</sub>O<sub>3</sub> Top-Gate FETs with Maximum Drain Current of 3 A/mm through Thermal Engineering and Pulse Measurement
2022
- A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current
arXiv (Cornell University) · 2022
- Realization of Maximum 2 A/mm Drain Current on Top-Gate Atomic-Layer-Thin Indium Oxide Transistors by Thermal Engineering
IEEE Transactions on Electron Devices · 2021
- Unique and unusual properties of layered ferrielectric CuInP 2 S 6 – II. Experimental
Bulletin of the American Physical Society · 2021
- Alignment of Polarization against an Electric Field in van der Waals Ferroelectrics
Physical Review Applied · 2020
- Electrical Transport of One-Dimensional Atomic Tellurium Nanowires Scaling Down to Two Nanometer Limit
Bulletin of the American Physical Society · 2020
- Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP<sub>2</sub>S<sub>6</sub> for Solid-State Refrigeration
ACS Nano · 2019
- ACS Nano×4
- Bulletin of the American Physical Society×4
- IEEE Transactions on Electron Devices×3
- arXiv (Cornell University)×3
- Applied Physics Letters×2
- Zhuocheng Zhang
Engineering · Purdue University West Lafayette
- Sunbin Deng
Engineering · Purdue University West Lafayette
- Jie Zhang
Engineering · Purdue University West Lafayette
- Haiyan Wang
Engineering · Purdue University West Lafayette
- peide ye
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile