Oana Malis
Physics and Astronomy · Purdue University West Lafayette
Publications
107
Citations
1,355
Est. group size
~6
Recurring co-author estimate
Active years
32
Publishing since 1995
Oana Malis works on semiconductor materials and devices, particularly nitride compounds like gallium nitride (GaN) and scandium aluminum nitride (ScAlN), grown as thin films and layered nanostructures. Her research focuses on engineering these materials' optical and electronic properties for potential applications in infrared and telecommunications photonics, including light-emitting and light-detecting quantum well devices. This involves both growing the materials using specialized deposition techniques and characterizing their structural and optical properties.
Publication output has been relatively steady at 3-5 papers per year over most of the past decade, with a notable spike in 2026 reflecting a cluster of related papers and preprints.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Efficient generation of entangled photons in the telecommunications range using nonlinear metasurfaces integrated with ScAlN/GaN heterostructures
arXiv (Cornell University) · 2026
- Efficient generation of entangled photons in the telecommunications range using nonlinear metasurfaces integrated with ScAlN/GaN heterostructures
arXiv (Cornell University) · 2026
- Towards monolayer control of interfaces for short-wavelength infrared transitions in ScAlN/GaN asymmetric double quantum wells
APL Materials · 2026
- <strong>Towards Monolayer Control of Interfaces for Short-Wavelength Infrared Transitions in ScAlN/GaN Asymmetric Double Quantum Wells</strong>
AIP Publishing · 2026
- Supplementary material
AIP Publishing · 2026
- Supplementary material
AIP Publishing · 2026
- Supplementary material
AIP Publishing · 2026
- Supplementary material
AIP Publishing · 2026
- Metal-modulated epitaxy of ScAlN thin films and lattice-matched ScAlN/GaN superlattices
Applied Physics Letters · 2026
- <strong>Metal modulated epitaxy of ScAlN thin films and lattice-matched ScAlN/GaN superlattices</strong>
AIP Publishing · 2026
- <strong>Metal modulated epitaxy of ScAlN thin films and lattice-matched ScAlN/GaN superlattices</strong>
AIP Publishing · 2026
- Structural optimization of lattice-matched Sc0.14Al0.86N/GaN superlattices for photonic applications
Journal of Applied Physics · 2025
- Structural characterization of scandium aluminum nitride/gallium nitride heterostructures for photonic applications
2025
- Structural optimization of lattice-matched Sc0.14Al0.86N/GaN superlattices for photonic applications
arXiv (Cornell University) · 2025
- Pinpointing lattice-matched conditions for wurtzite ScxAl1−xN/GaN heterostructures with x-ray reciprocal space analysis
Applied Physics Letters · 2024
- Journal of Applied Physics×7
- AIP Publishing×7
- Applied Physics Letters×4
- arXiv (Cornell University)×4
- Bulletin of the American Physical Society×3
- Agnes Maneesha Dominic Merwin Xavier
Physics and Astronomy · The Ohio State University
- Sheikh Ifatur Rahman
Physics and Astronomy · The Ohio State University
- Rajendra Kumar
Physics and Astronomy · Purdue University West Lafayette
- J. Y. Lin
Physics and Astronomy · Purdue University West Lafayette
- Syed M. N. Hasan
Physics and Astronomy · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
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