LabCompass

Oana Malis

Physics and Astronomy · Purdue University West Lafayette

Established · publishing since 1995

Publications

107

Citations

1,355

Est. group size

~6

Recurring co-author estimate

Active years

32

Publishing since 1995

Research summary
AI-generated

Oana Malis works on semiconductor materials and devices, particularly nitride compounds like gallium nitride (GaN) and scandium aluminum nitride (ScAlN), grown as thin films and layered nanostructures. Her research focuses on engineering these materials' optical and electronic properties for potential applications in infrared and telecommunications photonics, including light-emitting and light-detecting quantum well devices. This involves both growing the materials using specialized deposition techniques and characterizing their structural and optical properties.

Nitride semiconductor materials (GaN, ScAlN)Quantum well and heterostructure engineeringMolecular-beam epitaxy and thin-film growthInfrared and telecommunications photonicsStructural and optical characterization

Publication output has been relatively steady at 3-5 papers per year over most of the past decade, with a notable spike in 2026 reflecting a cluster of related papers and preprints.

Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026

Publication cadence
Publications per year over the last 10 years — averaging 4.2/year recently
172018: 4 publications182019: 5 publications192020: 3 publications202021: 3 publications212022: 3 publications22232024: 4 publications242025: 3 publications252026: 11 publications1126
Recent publications
Publishes in
  • Journal of Applied Physics×7
  • AIP Publishing×7
  • Applied Physics Letters×4
  • arXiv (Cornell University)×4
  • Bulletin of the American Physical Society×3
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This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 20, 2026.

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