L. J. Brillson
Engineering · The Ohio State University
Publications
394
Citations
10,835
Est. group size
~8
Recurring co-author estimate
Active years
56
Publishing since 1971
This researcher studies the atomic-scale defects and electronic structure at the surfaces and interfaces of semiconductor and oxide materials, using techniques like cathodoluminescence spectroscopy (a method that maps light emission to detect defects) and photoelectron spectroscopy. Recent work spans wide-bandgap semiconductors (Ga2O3, GaN, ZnO), transparent conducting oxides (ITO), and battery-related materials (V2O5, LiPON), connecting fundamental defect physics to applications in electronics, piezoelectric devices, and solid-state batteries. This research area sits at the intersection of materials science and electrical engineering, focused on understanding how tiny imperfections in materials affect device performance.
Publication output has been relatively steady but modest over the past decade, with a peak in 2020 (12 papers) followed by a gradual decline to around 3-6 papers per year in recent years.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Electric field dependence of nanoscale cathodoluminescence inside Cr doped β-Ga2O3 interfaces
Applied Physics Letters · 2026
- V2O5 Charged Point Defects
Open MIND · 2026
- V2O5 Charged Point Defects
Zenodo (CERN European Organization for Nuclear Research) · 2026
- Oxygen Vacancy Evolution at Li <sub> <i>x</i> </sub> V <sub>2</sub> O <sub>5</sub> /LiPON Solid State Electrochemical Interfaces Using Depth Resolved Cathodoluminescence Spectroscopy
ACS Applied Materials & Interfaces · 2026
- Detection, identification, and impact of native point defects on conduction in ITO thin films
Applied Physics Letters · 2026
- Remote plasma assisted processing and semiconductor interface electronic structure
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2025
- Cathodoluminescence spectroscopy and Kelvin probe work function correlation of native point defect distributions with piezoelectric voltage in strained ZnO microwires
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2025
- Quantifying Space-Charge Layer Formation and Potential Drops at LiPON/Li <sub>x</sub> V <sub>2</sub> O <sub>5</sub> Electrochemical Interfaces Based on First-Principles Calculations
ECS Meeting Abstracts · 2025
- Native Point Defects Controlling Piezoelectric Voltage in Strained ZnO Microwires
ACS Omega · 2024
- Electric field induced migration of native point defects in Ga2O3 devices
Journal of Applied Physics · 2023
- Lithium Spatial Distribution and Split-Off Electronic Bands at Nanoscale V<sub>2</sub>O<sub>5</sub>/LiPON Interfaces
ACS Applied Energy Materials · 2023
- Defects at nanoscale semiconductor interfaces: Challenges and opportunities
Journal of materials research/Pratt's guide to venture capital sources · 2023
- Nanoscale interplay of native point defects near Sr-deficient SrxTiO3/SrTiO3 interfaces
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2022
- Deep level defect spectroscopies of complex oxide surfaces and interfaces
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2021
- Elucidating Structural Transformations in Li<sub><i>x</i></sub>V<sub>2</sub>O<sub>5</sub> Electrochromic Thin Films by Multimodal Spectroscopies
Chemistry of Materials · 2020
- Applied Physics Letters×8
- Journal of Applied Physics×7
- Bulletin of the American Physical Society×5
- Journal of Vacuum Science & Technology A Vacuum Surfaces and Films×4
- Chemistry of Materials×3
- Ahmad Kermani
Engineering · The Ohio State University
- Adam Charnas
Engineering · Purdue University West Lafayette
- Dongqi Zheng
Engineering · Purdue University West Lafayette
- Han Zhao
Engineering · Purdue University West Lafayette
- Yen-Pu Chen
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile