Yen-Pu Chen
Engineering · Purdue University West Lafayette
Publications
23
Citations
244
Est. group size
~2
Recurring co-author estimate
Active years
11
Publishing since 2014
Yen-Pu Chen's research focuses on the reliability and performance of power transistors and wide-bandgap semiconductor devices, such as LDMOS transistors, Ga2O3, GaN, and silicon carbide transistors. Much of the work examines how devices degrade over time due to factors like hot carrier effects, radiation exposure, and self-heating, and develops measurement techniques and models to characterize and predict these degradation processes. This research is relevant to designing more durable electronic devices used in power electronics and harsh operating environments.
Publication output has been uneven over the past decade, peaking in 2021 with seven papers but showing minimal or no output in several other years, including a slowdown in recent years (2023-2025).
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Total Ionizing Dose Effects on the Performance and Hot Carrier Degradation of LDMOS Transistors
IEEE Transactions on Electron Devices · 2024
- A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors
2022 IEEE International Reliability Physics Symposium (IRPS) · 2022
- Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS Transistors
2022 IEEE International Reliability Physics Symposium (IRPS) · 2022
- Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In<sub>2</sub>O<sub>3</sub> Thin-Film Transistors
IEEE Electron Device Letters · 2021
- Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors—An Analytical Approach
IEEE Transactions on Device and Materials Reliability · 2021
- Super Single Pulse Charge Pumping Technique for Profiling Interfacial Defects
IEEE Transactions on Electron Devices · 2021
- An Analytical Model of Hot Carrier Degradation in LDMOS Transistors: Rediscovery of Universal Scaling
IEEE Transactions on Electron Devices · 2021
- A Junctionless Silicon Carbide Transistor for Harsh Environment Applications
Journal of Electronic Materials · 2021
- Three-point I–V spectroscopy deconvolves region-specific degradations in LDMOS transistors
Applied Physics Letters · 2021
- Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique
2021
- A Novel ‘I-V Spectroscopy’ Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors
2020
- A Device-to-System Perspective Regarding Self-Heating Enhanced Hot Carrier Degradation in Modern Field-Effect Transistors: A Topical Review
IEEE Transactions on Electron Devices · 2019
- Electrothermal performance limit of <i>β</i>-Ga2O3 field-effect transistors
Applied Physics Letters · 2019
- An Analytical Transient Joule Heating Model for an Interconnect in a Modern IC: Material Selection (Cu, Co, Ru) and Cooling Strategies
2019
- Design and Optimization of <tex>$\boldsymbol{\beta}$</tex>-Ga<inf>2</inf>O<inf>3</inf> on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective
2018
- IEEE Transactions on Electron Devices×4
- Applied Physics Letters×2
- 2022 IEEE International Reliability Physics Symposium (IRPS)×2
- Conference on Lasers and Electro-Optics×2
- IEEE Electron Device Letters×1
- Han Zhao
Engineering · Purdue University West Lafayette
- Bikram Kishore Mahajan
Engineering · Purdue University West Lafayette
- Marvin H. White
Engineering · The Ohio State University
- Shabnam Ghotbi
Engineering · Purdue University West Lafayette
- Eunseon Yu
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile