LabCompass

Hongyi Dou

Engineering · Purdue University West Lafayette

Mid career · publishing since 2005Rising activity

Publications

45

Citations

514

Est. group size

~25

Recurring co-author estimate

Active years

22

Publishing since 2005

Research summary
AI-generated

Hongyi Dou works on materials and devices for next-generation memory and computing, particularly resistive switching devices (memristors) and thin-film materials such as nitrides, ferroelectric hafnium-zirconium oxides, and other oxide thin films. This work is relevant to neuromorphic computing (chips that mimic brain-like information processing) and non-volatile memory technologies. The research combines materials growth and characterization, including in-situ electron microscopy studies, to understand how these devices switch and store information.

Resistive switching memristorsFerroelectric and oxide thin filmsNeuromorphic computing hardwareNitride- and oxide-based semiconductor devicesIn-situ electron microscopy characterization

Publication output grew from none in 2017-2019 to a peak around 2022-2023, then has held steady at a somewhat lower but still active rate through 2025.

Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026

Publication cadence
Publications per year over the last 10 years — averaging 7.6/year recently
1718192020: 1 publication202021: 4 publications212022: 9 publications222023: 12 publications12232024: 8 publications242025: 8 publications252026: 1 publication26
Recent publications
Publishes in
  • ACS Applied Materials & Interfaces×5
  • Advanced Functional Materials×4
  • IEEE Transactions on Electron Devices×3
  • Microscopy and Microanalysis×3
  • Advanced Materials Interfaces×2
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This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 20, 2026.

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