Hongyi Dou
Engineering · Purdue University West Lafayette
Publications
45
Citations
514
Est. group size
~25
Recurring co-author estimate
Active years
22
Publishing since 2005
Hongyi Dou works on materials and devices for next-generation memory and computing, particularly resistive switching devices (memristors) and thin-film materials such as nitrides, ferroelectric hafnium-zirconium oxides, and other oxide thin films. This work is relevant to neuromorphic computing (chips that mimic brain-like information processing) and non-volatile memory technologies. The research combines materials growth and characterization, including in-situ electron microscopy studies, to understand how these devices switch and store information.
Publication output grew from none in 2017-2019 to a peak around 2022-2023, then has held steady at a somewhat lower but still active rate through 2025.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device (Adv. Funct. Mater. 31/2026)
Advanced Functional Materials · 2026
- Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing
Advanced Functional Materials · 2025
- Coercive Field Control in Epitaxial Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films by Nanostructure Engineering
ACS Applied Materials & Interfaces · 2025
- In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
Advanced Functional Materials · 2025
- <i>In situ</i> STEM-EELS Study of Nitride Film Based Resistive Switching Device
Microscopy and Microanalysis · 2025
- Self-Assembled TiN-Metal Nanocomposites Integrated on Flexible Mica Substrates towards Flexible Devices
Sensors · 2024
- Impact of Oxidation Layer in the Resistive Switching Behavior of Nitride-Based Memristor Devices
Microscopy and Microanalysis · 2024
- In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices
arXiv (Cornell University) · 2024
- Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity
Science Advances · 2023
- Engineering of Grain Boundaries in CeO<sub>2</sub> Enabling Tailorable Resistive Switching Properties
Advanced Electronic Materials · 2023
- Combinatorial Growth of Vertically Aligned Nanocomposite Thin Films for Accelerated Exploration in Composition Variation
Small Science · 2023
- Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility
Applied Physics Letters · 2022
- Optical dielectric properties of HfO2-based films
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2022
- High performance, electroforming-free, thin film memristors using ionic Na <sub>0.5</sub> Bi <sub>0.5</sub> TiO <sub>3</sub>
Journal of Materials Chemistry C · 2021
- Creating Ferromagnetic Insulating La<sub>0.9</sub>Ba<sub>0.1</sub>MnO<sub>3</sub> Thin Films by Tuning Lateral Coherence Length
ACS Applied Materials & Interfaces · 2021
- ACS Applied Materials & Interfaces×5
- Advanced Functional Materials×4
- IEEE Transactions on Electron Devices×3
- Microscopy and Microanalysis×3
- Advanced Materials Interfaces×2
- Indranil Chakraborty
Engineering · Purdue University West Lafayette
- Akul Malhotra
Engineering · Purdue University West Lafayette
- Haitong Li
Engineering · Purdue University West Lafayette
- Amogh Agrawal
Engineering · Purdue University West Lafayette
- Karam Cho
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile