Karam Cho
Engineering · Purdue University West Lafayette
Publications
14
Citations
76
Est. group size
~1
Recurring co-author estimate
Active years
9
Publishing since 2016
Karam Cho works on emerging electronic devices, with a focus on new materials and physical effects that could make computer memory and logic circuits more energy-efficient. Recent work centers on the 'valley-spin Hall effect' in a thin material called tungsten diselenide (WSe2) to build compact, low-power memory and neural-network-style computing circuits, building on earlier work on negative-capacitance transistors, resistive memory, and semiconductor contact engineering.
Publication output has been low and irregular over the last decade, with small yearly counts (0-2 papers) and no clear growth or decline trend.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Harnessing Valley-Spin Hall Effect in WSe2 for Energy-Efficient Logic-Memory Integration
2024
- XNOR-VSH: A Valley-Spin Hall Effect-Based Compact and Energy-Efficient Synaptic Crossbar Array for Binary Neural Networks
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 2023
- XNOR-VSH: A Valley-Spin Hall Effect-based Compact and Energy-Efficient Synaptic Crossbar Array for Binary Neural Networks
arXiv (Cornell University) · 2023
- Valley-Spin Hall Effect-Based Nonvolatile Memory With Exchange-Coupling-Enabled Electrical Isolation of Read and Write Paths
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 2022
- Valley-Spin Hall Effect-based Nonvolatile Memory with Exchange-Coupling-Enabled Electrical Isolation of Read and Write Paths
arXiv (Cornell University) · 2022
- Utilizing Valley–Spin Hall Effect in Monolayer WSe<sub>2</sub> for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops
IEEE Transactions on Electron Devices · 2021
- Simulation Techniques for Nanoelectromechanical (NEM) Relay
Journal of Nanoscience and Nanotechnology · 2018
- Silver Nanowire/Colorless-Polyimide Composite Electrode: Application in Flexible and Transparent Resistive Switching Memory
Scientific Reports · 2017
- Experimental Observation of Negative Capacitance in Organic/Ferroelectric Capacitor for Steep Switching MOSFET
Journal of Nanoscience and Nanotechnology · 2017
- Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal–Interlayer–n-Germanium Source/Drain Structure
IEEE Electron Device Letters · 2016
- Atomic Layer Deposition of TiO<sub>2</sub>using Titanium Isopropoxide and H<sub>2</sub>O: Operational Principle of Equipment and Parameter Setting
JSTS Journal of Semiconductor Technology and Science · 2016
- Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance
IEICE Transactions on Electronics · 2016
- Capacitance matching effects in negative capacitnace field effect transistor
2016
- Impact of Trap Position on Random Telegraph Noise in a 70-Å Nanowire Field-Effect Transistor
JSTS Journal of Semiconductor Technology and Science · 2016
- JSTS Journal of Semiconductor Technology and Science×2
- IEEE Journal on Exploratory Solid-State Computational Devices and Circuits×2
- Journal of Nanoscience and Nanotechnology×2
- arXiv (Cornell University)×2
- Scientific Reports×1
- Amogh Agrawal
Engineering · Purdue University West Lafayette
- Deepika Sharma
Engineering · Purdue University West Lafayette
- Sourjya Roy
Engineering · Purdue University West Lafayette
- Akul Malhotra
Engineering · Purdue University West Lafayette
- Haitong Li
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile