Dong Su Yu
Materials Science · The Ohio State University
Publications
12
Citations
170
Est. group size
~4
Recurring co-author estimate
Active years
24
Publishing since 2003
Dong Su Yu works on gallium oxide (Ga2O3), an ultrawide-bandgap semiconductor material being developed for power electronics and high-frequency devices. The research focuses on growing high-quality Ga2O3 crystal films using a technique called metalorganic chemical vapor deposition (MOCVD), and building and characterizing electronic devices such as diodes, transistors, and capacitors from these films. Prospective students would likely work on materials growth, defect characterization, and device fabrication/testing in a semiconductor materials lab.
Publication activity shows a recent, sharp increase, with no recorded output from 2017-2023 followed by a jump to 3 publications in 2024 and 7 in 2025, suggesting a newly active or newly tracked research program.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Defect evolution and carrier compensation in high-growth rate MOCVD-grown β-Ga2O3
APL Materials · 2026
- Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes
APL Electronic Devices · 2025
- Metalorganic chemical vapor deposition epitaxy of β-Ga2O3 films on (001) Ga2O3 substrates with fast growth rates
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2025
- Electrical and structural characterization of <i>in situ</i> MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs
Journal of Applied Physics · 2025
- Electric field-induced carrier recovery and thermal stability of radiation-induced defects in β-Ga2O3
APL Materials · 2025
- Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes
APL Electronic Devices · 2025
- Metalorganic chemical vapor deposition <i>in situ</i> etching of β-Ga2O3 and β-(AlxGa1−x)2O3
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2025
- Erratum: “MOCVD growth of β-Ga2O3 with fast growth rates (&gt;4.3 <i>μ</i>m/h), low controllable doping, and superior transport properties” [Appl. Phys. Lett. <b>125</b>, 242106 (2024)]
Applied Physics Letters · 2025
- MOCVD growth of β-Ga2O3 with fast growth rates (&gt;4.3 <i>μ</i>m/h), low controllable doping, and superior transport properties
Applied Physics Letters · 2024
- Thin channel Ga2O3 MOSFET with 55 GHz fMAX and <b>&gt;</b>100 V breakdown
Applied Physics Letters · 2024
- High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2024
- Applied Physics Letters×3
- Journal of Vacuum Science & Technology A Vacuum Surfaces and Films×2
- APL Electronic Devices×2
- APL Materials×2
- Journal of Applied Physics×1
- Darpan Verma
Materials Science · The Ohio State University
- Lingyu Meng
Materials Science · The Ohio State University
- Hongping Zhao
Materials Science · The Ohio State University
- Kyle J. Liddy
Materials Science · The Ohio State University
- Zhanbo Xia
Materials Science · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile