Chang Niu
Engineering · Purdue University West Lafayette
Publications
69
Citations
762
Est. group size
~22
Recurring co-author estimate
Active years
15
Publishing since 2012
Chang Niu works on next-generation semiconductor devices, focusing on thin-film transistors made from oxide materials (like In2O3 and IGZO) and 2D materials such as tellurium, with attention to how quantum-scale electronic properties affect device performance. The research also extends into related applications like flexible chemical sensors and materials for thermal management. This work is relevant to future computer chips, displays, and wearable sensing technology.
Publication output has grown substantially over the past decade, rising from near zero before 2018 to a peak of 17 papers in 2024, indicating a strongly increasing and currently high level of research activity.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Gate-tunable giant negative magnetoresistance in tellurene driven by quantum geometry
Nature Communications · 2026
- Ultralow Voltage Operation of p‐ and n‐FETs Enabled by Self‐Formed Gate Dielectric and Metal Contacts on 2D Tellurium
Advanced Materials · 2025
- Analyzing the Contact-Doping Effect in In₂O₃ FETs: Unveiling the Mechanisms Behind the Threshold-Voltage Roll-Off in Oxide Semiconductor Transistors
IEEE Transactions on Electron Devices · 2025
- Flexible wearable/stickable ammonia colorimetric sensors with assistance of deep learning for ammonia leakage monitoring and early warning
Chemical Engineering Journal · 2025
- An artificial intelligence-assisted, kilometer-scale wireless and wearable biochemical sensing platform for monitoring of key biomarkers in urine
Biosensors and Bioelectronics · 2025
- Comprehensive Study of Low-Frequency Noise Origins in Scaled Atomic-Layer-Deposited IGZO TFTs
IEEE Transactions on Electron Devices · 2025
- Quantum Geometry and the Electric Magnetochiral Anisotropy in Noncentrosymmetric Polar Media
Physical Review Letters · 2025
- Universality of Subthreshold Slope and Defect Characterization in Thin Body Transistors
IEEE Electron Device Letters · 2025
- Analytical Modeling of Short-Channel Effects in BEOL-Compatible Thin-Film Transistors
IEEE Transactions on Electron Devices · 2025
- Distinguishing the Different Vth Shift Mechanisms in In₂O₃ TFTs Using Ultrafast On-the-Fly Reliability Measurements
IEEE Electron Device Letters · 2025
- Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States
Nano Letters · 2025
- Giant inverse elastocaloric effect of <i>n</i> -alkanes imbedded in a carbon-frame for room temperature thermal management
Nanoscale · 2025
- Critical Role of Quantum Confinement on Transfer Length in Achieving High-Performance In<sub>2</sub>O<sub>3</sub> Transistors with Ultra-Scaled Contacted Gate Pitch
2025
- Quantum geometry and the electric magnetochiral anisotropy in noncentrosymmetric polar media
arXiv (Cornell University) · 2025
- An Artificial Intelligence-Assisted, Kilometer-Scale Wireless and Wearable Biochemical Sensing Platform for Monitoring of Key Biomarkers in Urine
SSRN Electronic Journal · 2025
- arXiv (Cornell University)×9
- Nano Letters×7
- IEEE Transactions on Electron Devices×6
- Bulletin of the American Physical Society×6
- ACS Nano×3
- Peide D. Ye
Engineering · Purdue University West Lafayette
- Adam Charnas
Engineering · Purdue University West Lafayette
- Jian-Yu Lin
Engineering · Purdue University West Lafayette
- Haesung Kim
Engineering · Purdue University West Lafayette
- Zehao Lin
Engineering · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile