Yongjae Cho
Materials Science · Purdue University West Lafayette
Publications
29
Citations
329
Est. group size
~2
Recurring co-author estimate
Active years
17
Publishing since 2010
Yongjae Cho's research focuses on electronic devices built from two-dimensional (2D) materials such as MoS2 and MoTe2, particularly transistors that combine these ultrathin semiconductors with ferroelectric materials (materials that retain an electrical polarization, useful for memory devices) to create low-power memory and logic components. Work also covers improving electrical contacts in these devices and exploring related nanomaterials like fullerenes and organic thin films for optical and electronic applications. This research is aimed at developing smaller, more energy-efficient computer memory and transistor technologies.
Publication output has been modest and relatively steady over the past decade, generally 1-5 papers per year, with a recent uptick suggested by 2025-2026 counts.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Low 3 volt operation of 2D MoTe2 ferroelectric memory transistors with ultrathin pinhole-free P(VDF-TrFE) crystalline film
Materials Science and Engineering R Reports · 2024
- Performance Evaluation of MEMS-Based Automotive LiDAR Sensor and Its Simulation Model as per ASTM E3125-17 Standard
Sensors · 2023
- 5 nm Ultrathin Crystalline Ferroelectric P(VDF‐TrFE)‐Brush Tuned for Hysteresis‐Free Sub 60 mV dec<sup>−1</sup> Negative‐Capacitance Transistors
Advanced Materials · 2023
- Damage‐Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO<sub>3</sub> and LiF
Small Methods · 2022
- Third-order optical nonlinearity in nucleobase solid thin solid film and its application for ultrashort light pulse generation
Journal of Materials Chemistry C · 2022
- Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS<sub>2</sub> Field Effect Transistors
Nano Letters · 2021
- Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2
Advanced Electronic Materials · 2021
- Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two‐Dimensional and Oxide/Two‐Dimensional Transition Metal Dichalcogenide Diodes
Advanced Functional Materials · 2020
- Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE)
Nano Energy · 2020
- Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe<sub>2</sub>
Advanced Electronic Materials · 2020
- High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface
ACS Nano · 2020
- Exploring Cage‐warped Rotation Isomers of C<sub>20</sub> Fullerene: MP2 and Density Functional Calculations
Bulletin of the Korean Chemical Society · 2020
- Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba<sub>x</sub>Sr<sub>1‐x</sub>TiO<sub>3</sub> and MoS<sub>2</sub> Channel
Advanced Functional Materials · 2019
- Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS<sub>2</sub> and p-MoTe<sub>2</sub> Transistors
Nano Letters · 2019
- Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels
Advanced Electronic Materials · 2019
- Advanced Functional Materials×3
- Advanced Electronic Materials×3
- Nano Letters×2
- ACS Nano×2
- arXiv (Cornell University)×2
- Jisu Jang
Materials Science · Purdue University West Lafayette
- Avra S. Bandyopadhyay
Materials Science · Purdue University West Lafayette
- Radha N Somaiya
Materials Science · Purdue University West Lafayette
- Chih‐Pin Lin
Materials Science · Purdue University West Lafayette
- Jun Cai
Materials Science · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
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