Chih‐Pin Lin

Materials Science · Purdue University West Lafayette

Mid career · publishing since 2014

2D Materials and Applications MXene and MAX Phase Materials Graphene research and applications Advanced Sensor and Energy Harvesting Materials Advanced Memory and Neural Computing

Publications

Citations

149

Est. group size

Recurring co-author estimate

Active years

Publishing since 2014

Research summary

AI-generated

Chih-Pin Lin works on ultra-thin (2D) materials such as MoS2 and MoTe2 and their use in next-generation electronic devices, including transistors, memory chips, and 3D-integrated circuits. The research combines materials growth techniques (like chemical vapor deposition and solid-phase crystallization) with defect engineering to control how these materials behave electrically, aiming to improve computer memory and logic devices.

2D materials (e.g., MoS2, MoTe2) for electronicsDefect engineering and crystallization techniquesEmerging memory devices (FeRAM, SRAM)3D integration of electronic circuitsTransistor and semiconductor device physics

Publication output was minimal before 2020, peaked with a cluster of papers in 2021, and has continued at a low, intermittent pace through 2025.

Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026

Publication cadence

Publications per year over the last 10 years — averaging 0.8/year recently

Recent publications

Defect-engineered room temperature negative differential resistance in monolayer MoS 2 transistors
Nanoscale Horizons · 2022
2D Materials‐Based Static Random‐Access Memory
Advanced Materials · 2021
Two-dimensional solid-phase crystallization toward centimeter-scale monocrystalline layered MoTe 2 via two-step annealing
Journal of Materials Chemistry C · 2021
Improving Edge Dead Domain and Endurance in Scaled HfZrOx FeRAM
2021 IEEE International Electron Devices Meeting (IEDM) · 2021
Monolithic 3D Integration of 2D Electronics based on Two-Dimensional Solid-Phase Crystallization
Symposium on VLSI Technology · 2021
Phase and Carrier Polarity Control of Sputtered MoTe2 by Plasma-induced Defect Engineering
2020
Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide
2016

Publishes in

Nature Communications×1
ACS Nano×1
Advanced Materials×1
Nanoscale Horizons×1
Journal of Materials Chemistry C×1

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This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 20, 2026.

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