Sushovan Dhara
Materials Science · The Ohio State University
Publications
25
Citations
388
Est. group size
~8
Recurring co-author estimate
Active years
8
Publishing since 2018
Sushovan Dhara's research focuses on materials for next-generation electronic and sensing devices, especially the wide-bandgap semiconductor β-Ga2O3 (gallium oxide) used in power electronics like Schottky diodes and transistors, and 2D materials such as WSe2 and MoS2 used in phototransistors and gas sensors. The work combines device fabrication techniques (etching, doping, annealing) with electrical and optical characterization to improve device performance such as sensitivity, current density, and breakdown field strength.
Publication output has grown unevenly but generally increased over the last decade, rising from zero in 2017 to a peak of 8 in 2023, with continued activity through 2025.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Charge recovery by vacuum annealing in <i>β</i>-Ga2O3 multi-fin trench Schottky barrier diodes
APL Electronic Devices · 2025
- Demonstration of self-aligned β-Ga2O3 δ-doped MOSFETs with current density &gt;550 mA/mm
Applied Physics Letters · 2023
- β -Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination
Applied Physics Letters · 2022
- Gallium Oxide Schottky Barrier Diodes for Alpha Spectroscopy
Transactions of the American Nuclear Society · 2022
- Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction
Nature Communications · 2021
- All-Electrical High-Sensitivity, Low-Power Dual-Mode Gas Sensing and Recovery with a WSe<sub>2</sub>/MoS<sub>2</sub> pn Heterodiode
ACS Applied Materials & Interfaces · 2021
- Planar and 3-dimensional damage free etching of $\beta$-Ga2O3 using atomic gallium flux
arXiv (Cornell University) · 2021
- Planar and 3-dimensional damage free etching of $β$-Ga2O3 using atomic gallium flux
arXiv (Cornell University) · 2021
- Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction
arXiv (Cornell University) · 2020
- Comparative Evaluation of vdW Materials Based PN Junction and FET for Gas Sensing
2019
- Tunable WSe<sub>2</sub> phototransistor enabled by electrostatically doped lateral p-n homojunction
2019
- Tunable WSe 2 phototransistor enabled by electrostatically doped lateral p-n homojunction
IEEE Conference Proceedings · 2019
- Thin EOT MoS<sub>2</sub> FET for Efficient Photodetection and Gas Sensing
2018
- Applied Physics Letters×6
- arXiv (Cornell University)×6
- Nature Communications×1
- ACS Applied Materials & Interfaces×1
- Advanced Electronic Materials×1
- Hsien‐Lien Huang
Materials Science · The Ohio State University
- Joe F. McGlone
Materials Science · The Ohio State University
- A F M Anhar Uddin Bhuiyan
Materials Science · The Ohio State University
- Darpan Verma
Materials Science · The Ohio State University
- Lingyu Meng
Materials Science · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile