A F M Anhar Uddin Bhuiyan
Materials Science · The Ohio State University
Publications
85
Citations
2,230
Est. group size
~5
Recurring co-author estimate
Active years
21
Publishing since 2006
This researcher works on ultra-wide bandgap semiconductor materials, particularly β-Ga2O3 (gallium oxide), a material used in power electronics that can handle high voltages and harsh environments. Their work covers growing these materials using low-pressure chemical vapor deposition (LPCVD), etching techniques, and building devices like Schottky diodes, including testing how well these devices withstand radiation exposure. They also study related oxide and semiconductor materials such as ZnO and thermal management using diamond integration.
Publication output grew sharply from 2019 to a peak around 2020-2023, dipped in 2024, and rebounded in 2025, suggesting a generally active but somewhat variable publication cadence over the past decade.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Massive scabies outbreak in Rohingya refugee camps, Cox’s Bazar: Epidemiology and impact of a mass drug administration (MDA) campaign – A retrospective study
PLoS neglected tropical diseases · 2026
- Low-pressure CVD grown Si-doped β-Ga2O3 films with promising electron mobilities and high growth rates
Applied Physics Letters · 2025
- Plasma damage-free <i>in situ</i> etching of β-Ga2O3 using solid-source gallium in the LPCVD system
Applied Physics Letters · 2025
- Ultra-wide bandgap semiconductor materials, processing, and devices
Materials Science in Semiconductor Processing · 2025
- Quasi-vertical β-Ga2O3 Schottky diodes on sapphire using all-LPCVD growth and plasma-free Ga-assisted etching
APL Electronic Devices · 2025
- (<i>Invited</i>) Lpcvd Grown β-Ga<sub>2</sub>O<sub>3</sub> and Radiation-Hardened Devices for Extreme Environment Power Applications
ECS Meeting Abstracts · 2025
- Quasi-Vertical $β$-Ga$_2$O$_3$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching
arXiv (Cornell University) · 2025
- Neutron-Assisted Breakdown Enhancement in $β$-Ga$_2$O$_3$ Schottky Diodes
arXiv (Cornell University) · 2025
- High-Purity Diamond Integration on $β$-Ga$_2$O$_3$ via Microwave Plasma CVD for Enhanced Thermal Management
arXiv (Cornell University) · 2025
- Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation
Journal of Applied Physics · 2024
- (Invited) Development of Single Crystal Nbn Superconductor on Wide Bandgap GaN By Sputtering and Thermal Annealing
ECS Meeting Abstracts · 2024
- Radiation Resilience of $β$-Ga$_2$O$_3$ Schottky Barrier Diodes Under High Dose Gamma Radiation
arXiv (Cornell University) · 2024
- LPCVD Grown Si-Doped $β$-Ga$_2$O$_3$ Films with Promising Electron Mobilities
arXiv (Cornell University) · 2024
- Bangladesh Dairy Breeding Roadmap 2100
2024
- Asymmetric Channel Junctionless Field-Effect Transistors: a MOS Structure Biosensor
Silicon · 2021
- arXiv (Cornell University)×20
- Applied Physics Letters×17
- Journal of Applied Physics×7
- APL Materials×6
- Journal of Vacuum Science & Technology A Vacuum Surfaces and Films×5
- Hsien‐Lien Huang
Materials Science · The Ohio State University
- Joe F. McGlone
Materials Science · The Ohio State University
- Jinwoo Hwang
Materials Science · The Ohio State University
- Lingyu Meng
Materials Science · The Ohio State University
- Zhanbo Xia
Materials Science · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
Claim or correct this profile