Miles Lindquist
Physics and Astronomy · The Ohio State University
Publications
27
Citations
611
Est. group size
~1
Recurring co-author estimate
Active years
38
Publishing since 1988
Miles Lindquist works on wide-bandgap and 2D semiconductor materials and devices, focusing on gallium nitride (GaN) and gallium oxide (Ga2O3) transistors used for high-frequency and high-power electronics. Much of the work involves characterizing and modeling these transistors' electrical behavior, including how they heat up, trap charge, and perform under radio-frequency (RF) signals, often for applications like power amplifiers. The research combines device fabrication, measurement technique development, and simulation modeling to improve transistor performance at microwave and higher frequencies.
Publication output has been modest and fairly steady over the past decade, with a peak in 2019 followed by a slower but consistent pace of 1-3 papers per year in recent years.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Real-Time NVNA for the Acquisition of Time-Evolving IV Characteristics of GaN HEMTs During Trapping
IEEE Microwave Magazine · 2025
- Calibration of an Oscilloscope-Based NVNA for Periodic Modulated Signals
2024
- New Real-Time Pulsed-RF NVNA Testbed for Isothermal Characterization of Traps in GaN HEMTs
2023
- Experimental Validation of ASM-HEMT Nonlinear Embedding Modeling of GaN HEMTs at X-band
2023
- A Comparison Study on the Broadband Performance of Load-Modulated Architectures using Nonlinear Embedding at 20 GHz
2023
- Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport
IEEE Transactions on Electron Devices · 2022
- Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model
2021
- ASM-HEMT Embedding Model for Accelerated Design of PAs
2021
- RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band
IEEE Electron Device Letters · 2020
- Pulsed Power Performance of <i>β</i>-Ga₂O₃ MOSFETs at L-Band
IEEE Electron Device Letters · 2020
- Complementary growth of 2D transition metal dichalcogenide semiconductors on metal oxide interfaces
Applied Physics Letters · 2020
- ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance
IEEE Electron Device Letters · 2019
- Lateral β-Ga<sub>2</sub>O<sub>3</sub> field effect transistors
Semiconductor Science and Technology · 2019
- Self-Heating Characterization of $\beta$ -Ga<sub>2</sub>O<sub>3</sub> Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography
IEEE Transactions on Electron Devices · 2019
- Thin channel β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs with self-aligned refractory metal gates
Applied Physics Express · 2019
- IEEE Electron Device Letters×3
- IEEE Transactions on Electron Devices×2
- Applied Physics Letters×2
- Bulletin of the American Physical Society×2
- Semiconductor Science and Technology×1
- Shahadat H. Sohel
Physics and Astronomy · The Ohio State University
- Wenbo Li
Physics and Astronomy · The Ohio State University
- Brandon Dzuba
Physics and Astronomy · Purdue University West Lafayette
- Ke Xu
Physics and Astronomy · Purdue University West Lafayette
- Aaron R. Arehart
Physics and Astronomy · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
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