R. Muralidharan
Physics and Astronomy · Indiana University
Publications
31
Citations
228
Est. group size
—
Recurring co-author estimate
Active years
57
Publishing since 1970
R. Muralidharan works on semiconductor materials and electronic devices, with a focus on gallium nitride (GaN) based transistors used in high-power and high-frequency (microwave) applications. The research includes growing and characterizing materials such as GaN, gallium oxide, and nanowires, and building devices like high-electron-mobility transistors (HEMTs) on substrates including silicon, sapphire, and flexible films. Some work also explores emerging device concepts such as MoS2-based transistors for artificial synapses and gas sensing.
Publication activity has been fairly steady at roughly two to three papers per year over the decade, with a gap in 2023 followed by an uptick in the most recent years.
Generated by claude-opus-4-8 from public bibliographic data · Jul 11, 2026
- Microwave Power Performance of Buffer-Free AlGaN/GaN MISHEMT With MOCVD Grown Ex Situ SiN
IEEE Transactions on Electron Devices · 2025
- Carrier transport in LPCVD grown Ge-doped <i>β</i>-Ga2O3/4H-SiC isotype heterojunction
Journal of Applied Physics · 2024
- Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate
IEEE Transactions on Electron Devices · 2022
- Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices
Solid-State Electronics · 2021
- Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon
IEEE Electron Device Letters · 2021
- Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon
2020
- Structural and vibrational properties of CVD grown few layers MoS2 on catalyst free PAMBE grown GaN nanowires on Si (111) substrates
Journal of Alloys and Compounds · 2020
- Artificial Synapse Based on Back‐Gated MoS<sub>2</sub> Field‐Effect Transistor with High‐<i>k</i> Ta<sub>2</sub>O<sub>5</sub> Dielectrics
physica status solidi (a) · 2020
- Influence of Molecular Beam Epitaxy (MBE) Parameters on Catalyst-Free Growth of InAs Nanowires on Silicon (111) Substrate
Journal of Electronic Materials · 2019
- Mobile Agents In A Distributed Network With Trusted Node Implementation For Data Protection
International Journal of Computer Sciences and Engineering · 2019
- Electrical transport and gas sensing characteristics of dielectrophoretically aligned MBE grown catalyst free InAs nanowires
Nanotechnology · 2018
- <i>(Invited) </i>GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate
ECS Transactions · 2018
- Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs
2017
- X-ray pole figure analysis of catalyst free InAs nanowires on Si substrate
Materials Science and Engineering B · 2017
- arXiv (Cornell University)×4
- IEEE Transactions on Electron Devices×2
- Journal of Medical Internet Research×2
- Journal of Applied Physics×1
- Solid-State Electronics×1
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 11, 2026.
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