LabCompass

R. Muralidharan

Physics and Astronomy · Indiana University

Publications

31

Citations

228

Est. group size

Recurring co-author estimate

Active years

57

Publishing since 1970

Research summary
AI-generated

R. Muralidharan works on semiconductor materials and electronic devices, with a focus on gallium nitride (GaN) based transistors used in high-power and high-frequency (microwave) applications. The research includes growing and characterizing materials such as GaN, gallium oxide, and nanowires, and building devices like high-electron-mobility transistors (HEMTs) on substrates including silicon, sapphire, and flexible films. Some work also explores emerging device concepts such as MoS2-based transistors for artificial synapses and gas sensing.

GaN-based transistors (HEMTs) for power and microwave electronicsSemiconductor material growth (MOCVD, MBE, CVD)Nanowire synthesis and applicationsWide-bandgap materials (gallium oxide, III-nitrides)Emerging devices (MoS2 transistors, sensors)

Publication activity has been fairly steady at roughly two to three papers per year over the decade, with a gap in 2023 followed by an uptick in the most recent years.

Generated by claude-opus-4-8 from public bibliographic data · Jul 11, 2026

Publication cadence
Publications per year over the last 10 years — averaging 2.6/year recently
2017: 2 publications172018: 2 publications182019: 2 publications192020: 3 publications202021: 2 publications212022: 1 publication22232024: 4 publications242025: 3 publications252026: 5 publications526
Recent publications
Publishes in
  • arXiv (Cornell University)×4
  • IEEE Transactions on Electron Devices×2
  • Journal of Medical Internet Research×2
  • Journal of Applied Physics×1
  • Solid-State Electronics×1

This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.

Last updated Jul 11, 2026.

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