Joerg Appenzeller
Materials Science · Purdue University West Lafayette
Publications
307
Citations
23,459
Est. group size
~19
Recurring co-author estimate
Active years
35
Publishing since 1992
Joerg Appenzeller's research focuses on building and understanding tiny electronic switches (transistors) made from ultra-thin, atomically layered semiconductor materials such as MoS2 and WSe2. His work addresses practical challenges in shrinking these devices for future computer chips, including how to make good electrical contacts, reduce defects, and improve reliability as transistors get smaller than a single molecule thick. He also explores related topics like novel computing hardware (probabilistic bits) and characterizing material interfaces at the atomic scale.
Publication output has remained fairly steady over the last decade, averaging around 11-13 papers per year with minor year-to-year fluctuations but no clear long-term decline or growth.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Impact of Sapphire Substrate Reconstruction on the Structural, Electronic, and Photonic Properties of MoS <sub>2</sub>
Small · 2026
- Scaling Two-Dimensional Semiconductor Nanoribbons for High-Performance Electronics
arXiv (Cornell University) · 2026
- Scaling Two-Dimensional Semiconductor Nanoribbons for High-Performance Electronics
arXiv (Cornell University) · 2026
- Scaling of Two-Dimensional Semiconductor Nanoribbons for High-Performance Electronics
Research Square · 2026
- Immunity to Short Channel Effects in Monolayer MoS2 Transistors via Ultrathin Contact Extension
Research Square · 2026
- Accelerating the semiconductor innovation pipeline
Nature Reviews Electrical Engineering · 2026
- Low-resistance contacts for p-type monolayer tungsten diselenide transistors using metallic layered Nb0.3W0.7Se2
Nature Electronics · 2026
- Experimental Demonstration of an On-Chip CMOS-Integrated 3T-1MTJ Probabilistic Bit -- A P-Bit
arXiv (Cornell University) · 2026
- Monolayer MoS <sub>2</sub> Sensors for Probing the Self-Heating Effect in Indium Tin Oxide Nanoelectronics
Nano Letters · 2026
- Experimental Demonstration of an On-Chip CMOS-Integrated 3T-1MTJ Probabilistic Bit -- A P-Bit
arXiv (Cornell University) · 2026
- Seed Layer Engineering for Effective Charge Transfer Doping of MoS$_2$ Transistors
arXiv (Cornell University) · 2026
- Seed Layer Engineering for Effective Charge Transfer Doping of MoS$_2$ Transistors
arXiv (Cornell University) · 2026
- Scaling two-dimensional semiconductor nanoribbons for high-performance electronics
Nature Communications · 2026
- Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors
Nature Communications · 2025
- Monolayer WSe<sub>2</sub> Field-Effect Transistor Performance Enhancement by Atomic Defect Engineering and Passivation
ACS Nano · 2025
- arXiv (Cornell University)×15
- ACS Nano×10
- IEEE Transactions on Electron Devices×8
- ECS Meeting Abstracts×6
- Research Square×6
- Zhihong Chen
Materials Science · Purdue University West Lafayette
- Marc Bockrath
Materials Science · The Ohio State University
- Andres E. Llacsahuanga Allcca
Materials Science · Purdue University West Lafayette
- Sumukh Vaidya
Materials Science · Purdue University West Lafayette
- C. T. White
Materials Science · Indiana University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
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