Hemant Ghadi
Physics and Astronomy · The Ohio State University
Publications
102
Citations
926
Est. group size
~7
Recurring co-author estimate
Active years
14
Publishing since 2013
Hemant Ghadi's research focuses on semiconductor materials and devices used for detecting light, especially infrared and ultraviolet radiation, and on how these materials behave under radiation exposure. Much of the work involves quantum dots (tiny nanoscale semiconductor structures) made from materials like InAs/GaAs, used to build infrared photodetectors and imaging sensors, as well as studies of gallium oxide (Ga2O3) materials for radiation detection applications.
Publication output was highest between 2017 and 2019, then declined substantially from 2020 onward, with only a small number of publications per year in recent years.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Effect of electric field on defect generation and migration barriers in high energy proton irradiated Ga2O3.
2025
- Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation
physica status solidi (a) · 2022
- Monitoring soil pH variation using Polyaniline/SU-8 composite film based conductometric microsensor
Sensors and Actuators B Chemical · 2019
- High performance short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) validated with theoretically simulated model
Journal of Alloys and Compounds · 2019
- <i>In situ</i> measurement of temperature dependent picosecond resolved carrier dynamics in near infrared (NIR) sensitive device on action
Review of Scientific Instruments · 2019
- Impact of ultra-thin quaternary capping on modulation doped p-i-p quantum dots (InAs/GaAs) based infrared detector
2019
- Influence of modulation doping on p-i-p quantum-dots (InAs/GaAs)-based infrared detector performance
2019
- Impact of ternary capping on p-i-p InAs/GaAs quantum-dot infrared photodetectors
2019
- Improvement in operating temperature of InAs/GaAs quantum-dots-based photodetectors by varying position of localized carriers in active region
2019
- Inversion of activity in DSSC for TiO2 and ZnO photo-anodes depending on the choice of sensitizer and carrier dynamics
Journal of Luminescence · 2018
- Improved Absorbance and Near-Infrared Dispersion of AuGe Nanoparticles over Au Nanoparticles Prepared with Similar Thermal Annealing Environment
Plasmonics · 2018
- Modelling of dark current and noise dependence on capping thickness in quantum dots based infrared photodetectors
2018
- Highly efficient InAs/InGaAs quantum dot-in-a-well heterostructure validated with theoretically simulated model
2018
- Co-relation of theoretical simulation with experimental results for InAs quantum-dot heterostructures with different capping material
2018
- Short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) for high temperature operation
2018
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE×7
- APL Materials×6
- Journal of Alloys and Compounds×5
- Journal of Luminescence×5
- Superlattices and Microstructures×4
- Mary Vaughan
Physics and Astronomy · Purdue University West Lafayette
- W. J. Choi
Physics and Astronomy · The Ohio State University
- Mehrez Oueslati
Physics and Astronomy · Indiana University
- J. Mirecki Millunchick
Physics and Astronomy · Indiana University
- Manisha Muduli
Physics and Astronomy · The Ohio State University
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 19, 2026.
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