Gang Qiu
Materials Science · Purdue University West Lafayette
Publications
132
Citations
5,759
Est. group size
~4
Recurring co-author estimate
Active years
23
Publishing since 2004
Gang Qiu works on materials science topics related to thin-film transistors, quantum transport in 2D and topological materials, and superconducting/magnetic heterostructures. Recent work spans oxide semiconductor devices (like IGZO and CaSnO3 transistors), exotic electronic transport phenomena (quantum Hall and vortex Hall effects), and novel superconducting junctions. The research combines device fabrication and characterization with fundamental studies of electronic and quantum behavior in engineered material systems.
Publication output declined from a peak around 2017-2018 to a low point in 2020-2022, then has been recovering with a notable increase in 2025.
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Metal-Induced Oxygen Diffusion-Aware Design of a-IGZO TFTs for Boosting Performance
ACS Applied Materials & Interfaces · 2026
- Metal-Induced OxygenDiffusion-Aware Design of a‑IGZOTFTs for Boosting Performance
Figshare · 2026
- Mechanically Exfoliated Metallic Delafossite PdCoO2 Nanomembranes: Quantum Transport and Electrical Evaluation Toward Interconnect Applications
arXiv (Cornell University) · 2026
- Mechanically Exfoliated Metallic Delafossite PdCoO2 Nanomembranes: Quantum Transport and Electrical Evaluation Toward Interconnect Applications
arXiv (Cornell University) · 2026
- Evidence of anomalous vortex Hall effect in a ferromagnet/superconductor heterostructure
Applied Physics Letters · 2026
- Unveiling Radiation-Tolerant Thickness in a-IGZO Thin-Film Transistors with Sub-10 nm Film and Restoring Abnormalities via Energy-Efficient Electrothermal Annealing
Nano Letters · 2025
- High‐Performance Ultra‐Wide‐Bandgap CaSnO <sub>3</sub> Metal‐Oxide‐Semiconductor Field‐Effect Transistors
Advanced Electronic Materials · 2025
- Exploration of Interplay Between Charge Trapping Dynamics and Polarization Switching in α -In₂Se₃ Ferroelectric Semiconductor FETs
IEEE Electron Device Letters · 2025
- In‐Plane Field Induced Half Quantized Hall Conductivity in Trilayer Magnetic Topological Insulator
Advanced Materials · 2025
- Advanced characterization of density-of-states over wide bandgap-energy in p-type Cu2O TFTs by multiple-wavelength light source
Applied Physics Letters · 2025
- Field-resilient supercurrent diode in a multiferroic Josephson junction
Nature Communications · 2025
- Non-Stationary Wind Loading Identification for Large Transmission Tower Based on Dynamic Finite-Element Model Updating
Energies · 2025
- Recent progress on quantum Hall effect in unconventional material systems
Applied Physics Letters · 2025
- Numerical study of wind-induced nonlinear vibration on transmission line conductors using a wake oscillator model
Journal of Physics Conference Series · 2025
- Design and Validation of PEEK-Based Curved Lap Joints for Ultrasonic Welding in On-Orbit Rapid Construction of Truss Structures
Journal of Manufacturing Science and Engineering · 2025
- arXiv (Cornell University)×14
- Bulletin of the American Physical Society×10
- Nano Letters×8
- ACS Nano×4
- IEEE Electron Device Letters×4
- Dmitry Shcherbakov
Materials Science · The Ohio State University
- Ziling Li
Materials Science · The Ohio State University
- Joshua E. Goldberger
Materials Science · The Ohio State University
- Warren L. B. Huey
Materials Science · The Ohio State University
- Jun Cai
Materials Science · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile