Abhishek B. Solanki
Materials Science · Purdue University West Lafayette
Publications
22
Citations
295
Est. group size
~13
Recurring co-author estimate
Active years
16
Publishing since 2011
Abhishek B. Solanki's work focuses on semiconductor device physics, particularly tunneling field-effect transistors (TFETs), a type of low-power transistor being explored as an alternative to conventional transistors. His research examines how device design choices, such as gate-source overlap, affect both individual transistor performance and their behavior in analog circuits. This work sits at the intersection of materials science and electrical engineering, relevant to future low-power electronics.
Publication output has fluctuated over the last decade with no clear steady growth, showing intermittent peaks (e.g., 2020 and 2022) and gaps (e.g., 2018 and 2024).
Generated by claude-sonnet-5 from public bibliographic data · Jul 20, 2026
- Impact of Gate–Source Overlap on the Device/Circuit Analog Performance of Line TFETs
IEEE Transactions on Electron Devices · 2019
- Drain Current Saturation in Line Tunneling-Based TFETs: An Analog Design Perspective
IEEE Transactions on Electron Devices · 2017
- Nano Letters×3
- arXiv (Cornell University)×3
- Conference on Lasers and Electro-Optics×3
- IEEE Transactions on Electron Devices×2
- Bulletin of the American Physical Society×2
- Peng Ju
Materials Science · Purdue University West Lafayette
- Kunhong Shen
Materials Science · Purdue University West Lafayette
- Alex L. Melendez
Materials Science · The Ohio State University
- Alexei Lagutchev
Materials Science · Purdue University West Lafayette
- Alexander Senichev
Materials Science · Purdue University West Lafayette
This profile was generated automatically from public scholarly data (OpenAlex). Group size and activity levels are estimates derived from co-authorship patterns.
Last updated Jul 20, 2026.
Claim or correct this profile